Search results for "transistor"

Renesas Electronics hasunveiled the R-Car V3U - a ASIL D System on Chip (SoC) for Advanced Driver Assistance Systems (ADAS) and Automated Driving (AD) systems. Delivering a groundbreaking 60 TOPS with low power consumption for deep learning processing and up to 96,000 DMIPS, the R-Car V3U is built for the performance, safety, and scalability (up and down) demands of ADAS and AD architectures driving next-generation autonomous vehicles.

At the 2020 International Electron Devices Meeting, imec presented a novel dynamic random-access memory (DRAM) cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors (IGZO-TFTs) and no storage capacitor.

Ampleon has announced the BLU9H0408L-800P 800-Watt RF power transistor. Using Ampleon’s latest Gen9 (50V) LDMOS process technology, the BLU9H0408L-800P has been specifically designed for use in high-power radar systems operating in the 400 to 800MHz UHF frequency band.

Infineon Technologies has broadened its EiceDRIVER portfolio with the new 24V dual-channel low side gate driver with an integrated thermal pad. It can be operated with high switching frequencies as well as highest peak output currents and offers an enable function.

Ampleon has released the BLF989E RF power transistor, which uses the very latest ninth-generation high-voltage (50V) LDMOS process technology. The BLF989E has been designed to deliver the highly efficient Doherty amplifiers required by the next generation of UHF TV transmitters.

GaNSystems hasannounced a new100V High-Speed, Half-Bridge Evaluation Board(GS-EVB-HB-61008P-ON) in collaboration withON Semiconductor. Available now through distribution partners, this high performance solution is developed for existing and new PCB designs and allows power electronics designers to easily evaluate GaN for growing 48V market applications, including non-isolated step-down converters, non-isolated step-up converters, and half-bridge ...

Switched mode power supplies are ubiquitous but often poorly understood. To optimise their use in systems requires an understanding of how the various types and how they operate

Protecting the multitude of low power networked devices from transient voltage spikes is essential to avoid damage in the industrial IoT, communications and wireless devices

Murata Electronics has announced the availability of two new metal terminal type MLCCs (multilayer ceramic capacitor) with temperature compensating U2J characteristics. The KCM line for automotive applications delivers low loss and excellent stability performance in high temperature, high voltages, and high frequencies.

Building upon the advantages of STMicroelectronics’ MasterGaN platform, MasterGaN2 is the first in the new family to contain two asymmetric gallium-nitride (GaN) transistors, delivering an integrated GaN solution suited to soft-switching and active-rectification converter topologies.