Search results for "d2pak"

Nexperia has announced new 0.55mΩ RDS(on) 40V power MOSFETs in the high-reliability LFPAK88 package forautomotive (BUK7S0R5-40H)andindustrial (PSMNR55-40SSH)applications. These devices are the lowest RDS(on) 40V parts that Nexperia has ever produced and more importantly, they deliver greater power densities than traditional D2PAK devices.

ON Semiconductor has announced a dedicated critical conduction mode (CrM) totem pole PFC controller as a new addition to their solution set for ultra-high density offline power supplies.

ON Semiconductor has announced a pair of 1,200V full silicon carbide (SiC) MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market.

UnitedSiC has expanded its FET portfolio with the introduction of six new 650V and 1,200V options, all housed in the industry standard D2PAK-7L surface mount package. Available in 30, 40, 80 and 150mΩ versions, these latest SiC FETs represent another step forward in accelerating migration to SiC across applications such as server and telecom power supplies, industrial battery chargers and power supplies, EV on-board chargers and DC/DC converter...

Toshiba Electronics has announced five 650V superjunction power MOSFETs housed in the new compact SMD package in TO-leadless (TOLL) format. Measuring just 9.9x11.68x2.3mm (WxLxH), the TK065U65Z, TK090U65Z, TK110U65Z, TK155U65Z and TK190U65Z devices have a 27% smaller footprint than the conventional D2PAK package.

Power semiconductors are the key to an energy-efficient world. New technologies such as silicon carbide (SiC) and gallium nitride (GaN) enable higher power efficiency, smaller form factors and lower weight. Silicon also plays a major role in many designs. Energy efficiency is the focus of the ‘Virtual Power Conference’, which will be available ‘live’ from May 4th to 6th, 2021.

ON Semiconductor has announceda new range of silicon carbide MOSFET devicesfor demanding applications where power density, efficiency and reliability are key considerations. By replacing existing silicon switching technologies with the new SiC devices, designers will achieve significantly better performance in applications such as electric vehicles (EV) on-board chargers (OBC), solar inverters, server power supply units (PSU), telecoms and uninte...

STMicroelectronics’ 800V 8H Triacs operate at full rated current up to the maximum junction temperature of 150°C, allowing heatsinks in drives for AC loads to be up to 50% smaller to combine compact dimensions with high reliability.

Alpha and Omega Semiconductor have packaged the latest MOSFET series in a leadless package that is smaller than a D2PAK to save space in a many applications.

ON Semiconductor’s latest 1200V-rated MOSFETs are in stock at distributor RS Components.