Search results for "SiC"

ROHM has developed four models as part of the TRCDRIVE pack series with 2-in-1 SiC moulded modules (two 750V-rated: BSTxxxD08P4A1x4, and two 1,200V-rated: BSTxxxD12P4A1x1) optimised for electric vehicle (xEV) traction inverters.

As PCIM 2024 kicks off, addressing SiC & GaN test & measurement (T&M) concerns is one of the many topics taking centre stage, with companies like Rohde & Schwarz revealing new products that address these problems.

Nexperia has announced its industry-leading 1200 V SiC MOSFETs in D2PAK-7 packaging, offering a choice of 30, 40, 60, and 80 mΩRDSon values. These devices are the latest addition to a series that will see Nexperia'sSiC MOSFET portfolio rapidly expand to include devices with RDSon values of 17, 30, 40, 60, and 80 mΩ in various flexible package options.

During this year’s PCIM Europe in Nuremberg, Germany, June 11th – 13th, ROHM will present its new power semiconductor solutions with a special focus on wide bandgap devices.

Investments and expansions at device, epiwafer, and wafer levels are driving growth in the multi-billion dollar SiC power market. Device manufacturers are constructing facilities in various regions.

The emergence of EV DC charging presents a promising business venture for companies specialising in power electronics.

Navitas Semiconductor, the pure-play, next-generation power semiconductor company and industry pioneer in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced their AI data centre technology roadmap for up to three times power increase to support similar exponential growth in AI power demands expected in just the next 12–18 months.

Due to the complexity of growing quality silicon carbide (SiC) crystals, manufacturers need help obtaining sufficient systems to meet global production targets

At the Applied Power Electronics Conference (APEC), CISSOID will release its new series of SiC Inverter Control Modules (ICMs) dedicated to the E-mobility market.

Infineon Technologies is ensuring it will not run short of 150-millimetre silicon carbide (SiC) wafers.