Search results for "SiC"

TIDM-02014 is a 800-V, 300kW SiC-based traction inverter system reference design developed by Texas Instruments and Wolfspeed provides a foundation for OEMs and design engineers to create high-performance, high-efficiency traction inverter systems and get to market faster.

SiCrystal has announced the creation of a new additional production space in the northeast of Nuremberg, directly opposite the existing site.

Vishay Intertechnology has introduced 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes.

Mouser Electronics is now stocking the ACS37030 and ACS37032 current sensors from Allegro MicroSystems.

Authorised distributor Mouser Electronics is now shipping the CoolSiC G2MOSFETs from Infineon Technologies.

Navitas Semiconductor has announced its new portfolio of Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs optimised for the fastest switching speed, highest efficiency, and increased power density for applications such as AI data centre power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS).

At PCIM 2024 on the Infineon booth, Electronic Specifier’s Harry Fowle got to speak with Peter Friedrichs, VP of SiC at Infineon, to learn about Infineon’s focus within the SiC market.

New families of silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in TSPAK packaging are being premiered by WeEn Semiconductors at PCIM Europe in Nuremberg (June 11-13).

SemiQ has added 1700V SiC Schottky discrete diodes and dual diode packs to its QSiC product line.

At PCIM 2024, ROHM unveiled its new SiC product offerings as well as outlined its vision for the future. Leading the conversation was Dr. Kazuhide Ino, Managing Executive Officer & Head of Power Device Business at ROHM.