Search results for "igbt"
Reference design: Broadcom ACPL-352J / ACPL-337J with Infineon 1200V/600V EasyPIM/EconoPIM IGBT
This new IGBT reference design using Broadcom Isolation and Infineon Power Integration Modules can speed up the time to market with its 3-phase Half-bridge design.The reference design uses the Broadcom ACPL-352J and ACPL-337J Gate Drivers with Infineon 1200V/600V EasyPIM and EconoPIM IGBT Modules.
PCIM Europe 2020 - virtually the same show
Covid-19 has put a stop to many events this year, but PCIM Europe continues in a virtual form, with the conference and exhibition accessible via a virtual platform over two days (Tuesday 7th and Wednesday 8th July). Here is a guide to what is available from exhibitors and conference speakers.
Package technology decreases on-resistance in battery MOSFETs
RigidCSP package technology allows a decrease in on-resistance, says Alpha and Omega Semiconductor. At the same time, it is claimed to increase mechanical strength for robust assembly board manufacture.
Latest AOS SiC MOSFETs target industrial markets
Alpha and Omega Semiconductor has introduced the AOK065V120X2. This is the first in a planned series of silicon carbide (SiC) MOSFETs.
ROHM and Leadrive develop SiC-based automotive inverters
ROHM and Leadrive Technology (LEADRIVE), the Chinese leading manufacturer of automotive powertrain for new energy vehicles with headquarters in Shanghai, held an opening ceremony of their joint laboratory on SiC technology in the China (Shanghai) Pilot Free Trade Zone (Lingang New Area), after agreeing to partner todevelop SiC-based automotive inverters.
Optical Technology withstands IGBT Destructive Testing - Would alternative Isolators withstand this?
The polyimide film and insulation barrier of Broadcom gate drive optocouplers proves robust even during catastrophic failures like the IGBT destructive tests presented in this paper. Although the gate driver boards were damaged, the gate drive optocouplers were able to pass partial discharge and high voltage tests, providing reinforced insulation, protecting the systems and users.Read more here.
Infineon silicon carbide power module for EVs
Silicon carbide in electric vehicles stands for more efficiency, higher power density and performance. Particularly with an 800V battery system and a large battery capacity, silicon carbide leads to a higher efficiency in inverters and thus enables longer ranges or lower battery costs.
Power management in electric vehicles
In electrical and hybrid powertrains, the new 48V electrical architecture pushes the limit with regard to electromagnetic compatibility and safety requirements. Optical Ethernet technology brings in its inherent galvanic isolation and mechanical robustness, providing the ideal network for current and future in-vehicle connectivity.
Shaping the future of industrial designs with GaN technology
Power management is integral to business strategy at Texas Instruments (TI), and the company is pushing significant investment towards GaN technology (gallium nitride), which has huge potential to make a difference to how industrial and other applications are going to function in the future.
GT20N135SRA from Toshiba offers design flexibility
Toshiba Electronics has launched a new discrete 1350V insulated gate bipolar transistor (IGBT),GT20N135SRA, for use in resonance-based home appliance applications that use induction heating, including tabletop cookers, rice cookers and microwave ovens.