Search results for "SiC"

Toshiba Electronics has developed a new 2,200V rated silicon carbide (SiC) MOSFET with embedded Schottky barrier diode (SBD) for use in 1,500V DC applications such as photovoltaic (PV) inverters, electric vehicle (EV) chargers, high frequency DC/DC converters, and energy storage systems.

SICK has unveiled the first photoelectric sensor with a touchscreen display, heralding the future for universal and easy-set-up sensing.

The power electronics market continues to grow due to government regulations, the demand for renewables, and the need for increased efficiency.

SICK has added Liquid Lens technology to the Lector 61X, its smallest image-based code reader, to deliver rapid and infinitely-variable focal adjustment and a significantly-extended depth of field.

Infineon has detailed its plans to highlight a broad range of power electronic devices during APEC 2024, 25–29 February.

Navitas Semiconductor will introduce and display an expanded portfolio of gallium nitride (GaN) and silicon carbide (SiC) power products at PCIM 2023.

The PCIM conference for power electronics in Asia returns to Shanghai this year, gathering experts and academics from across the country and beyond to share the latest findings and technology within power electronics, intelligent motion, renewable energy and energy management. Highlighted areas include wide-bandgap devices, power semiconductors, packaging technology and more.

Power semiconductor innovations toward green goals are the focus of the PowerUP Asia 2024 virtual conference.

The second Co-founder of GaN Systems, Girvan Patterson, has joined his fellow Co-founder, Geoff Haynes, as an Advisor at QPT. Patterson was CEO at GaN Systems Inc (now part of Infineon) for over eight years and has been the founder of three major start-ups and seven IPOs and M&A transactions.

Logic-level MOSFETs, which already turn on at typical microcontroller output voltages of 2 V to 5 V, are used in many designs.