Search results for "SiC"

Navitas Semiconductor has announced the fifth generation of high-speed GeneSiC SiC power diodes for demanding data centre, industrial motor-drive, solar and consumer applications.

Navitas Semiconductor has announced the fifth generation of high-speed GeneSiC silicon carbide (SiC) power diodes for demanding data centre, industrial motor-drive, solar and consumer applications.

Infineon Technologies has signed a long-term agreement with Chinese SiC wafers supplier TanKeBlue to secure additional competitive SiC sources.

The semiconductor industry continually pushes packaging technology boundaries to meet the demand for higher chip performance and efficiency.

Developed for high precision in the micron range, SICK’s OD7000 displacement sensor measures tiny distances in challenging electronics and solar manufacturing applications cost-effectively.

Heraeus Electronics is pleased to announce its participation at SMTA International, a premier event for electronics manufacturing and assembly professionals.

According to an industry analysis conducted by Fact.MR, in 2024, the worldwide LiDAR sensor market is anticipated to reach a value of $2.42 billion and is projected to grow at a remarkable CAGR of 14%, reaching $7.95 billion by 2034.

The TMS320F28003x (F28003x) is a member of the C2000™ real-time microcontroller family of scalable, ultra-low latency devices designed for efficiency in power electronics, including but not limited to: high power density, high switching frequencies, and supporting the use of GaN and SiC technologies.

UCC14240-Q1 is an automotive qualified high isolation voltage DC/DC power module designed to provide power to IGBT or SiC gate drivers. The UCC14240-Q1 integrates a transformer and DC/DC controller with a proprietary architecture to achieve high efficiency with very low emissions. The high-accuracy output voltages provide better channel enhancement for higher system efficiency without over-stressing the power device gate.

The power electronics landscape is changing. Wide-bandgap (WBG) devices, including gallium nitride (GaN) and silicon carbide (SiC), are gaining traction in replacing silicon devices, which are reaching their theoretical limits in performance, in applications including power modules and power inverters, motor drives, and chargers and adapters, to name a few.