Search results for "transistor"

HONOLULU - Before the start of the prestigious 2006 Symposium on VLSI Technology, Texas Instruments unveiled details of a 45-nanometer semiconductor manufacturing process that leverages a "wet" lithography process to double the number of chips produced on each silicon wafer, increase processing performance and reduce power consumption. Through the use of numerous proprietary techniques, TI will drive the capabilities of its multi-million tra...

Texas Instruments has announced plans to integrate a high-k value material within the transistors in its most advanced, high performance 45nm chip products. For years, high-k dielectrics have been under consideration to address leakage, or power drain, which has become increasingly problematic as transistor dimensions continue to shrink. Through its approach, TI will reduce leakage by more than 30 times per unit area as compared with commonly u...

Texas Instruments today introduced what it says is the industry’s smallest remote junction temperature sensors with a built-in local temperature sensor. The single remote channel TMP421 and dual remote channel TMP422 provide remote sensor accuracy of ±1C (maximum) and a local temperature sensor range of ±1.5C (maximum). Both sensors are RoHS compliant and can be used in numerous applications including LCD/DLP/LCOS projectors, ...

Raychem Circuit Protection, a business unit of Tyco Electronics, has announced the introduction of its PolySwitch LVR series of resettable circuit protection devices. PolySwitch LVR devices help protect electric motors and transformers used in commercial and home appliances from failures caused by mechanical overloads, overheating, stall, lost neutral and other potentially damaging conditions.

Renesas announced the development of an optical-coupled metal-oxide-semiconductor field-effect transistor (MOSFET), the PS7901D-1A, that achieves complete electrical isolation within the package by using light for signal transmission.

Panasonic Corporation and Renesas Technology Corp. announced today that they will concentrate their joint development functions for leading-edge SoC process technologies at the Renesas Naka site (in Hitachinaka City, Ibaraki Prefecture) and will start operation of their 28 to 32 nm process development line installed at that site from October 1, 2009. The two companies, by concentrating their joint development functions at the Naka site with its 3...

Toshiba Electronics Europe (TEE) annonce deux nouveaux circuits intégrés de commande haute tension et fort courant, qui vont grandement simplifier les conceptions d'applications avec des moteurs pas à pas dans les secteurs de l'industriel et de la bureautique.

Toshiba Electronics Europe (TEE) a encore étendu sa gamme de circuits intégrés logiques photocoupleurs ultracompacts avec quatre nouveaux dispositifs répondant aux besoins d'interfaçage numérique à haute vitesse dans des applications des secteurs de l'industriel, de l'électroménager et de la mesure.

Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W at 14.5GHz, the highest level of performance yet reported at this frequency band. The main application of the new transistor will be in base stations for satellite microwave communications, which carry high-capacity signals, including high-defi...

Toshiba Electronics Europe (TEE) has further expanded its range of ultra-compact IC logic couplers with four new devices that address requirements for high-speed, electrically isolated digital interfacing in a variety of industrial, automation, home appliance and measurement applications.