Search results for "transistor"
Motor driver solution with voltage regulator, watchdog, reset and wake-up functions
Gleichmann Electronics now offers the E523.01 motor driver from Elmos Semiconductor. This new IC controls up to three external NMOS half bridges for driving BLDC motors or DC motors. The E523.01 features a LIN2.1 compatible interface as well as a PWM interface with data preprocessing.
SmartKem Receives Investment Funding To Continue Innovative Development
SmartKem Limited, the developer of novel, printable organic semiconductor materials and ink formulations for flexible electronics, today announced it has received investment funding from the Porton Capital Group and Finance Wales Investments Limited. The investment allows SmartKem to further develop its flexible printed electronics solutions.
Freescale rolls out first products in QorIQ Qonverge wireless base station processor portfolio
Freescale Semiconductor is now sampling the first base station-on-chip products built on its innovative QorIQ Qonverge multimode platform. The new QorIQ Qonverge PSC9132 system-on-chip (SoC) for picocell and PSC9130/31 SoCs for femtocell base stations share a single, scalable architecture that simultaneously supports multiple air interfaces, providing operators and OEMs future-proof, highly integrated heterogeneous solutions that help minimize po...
STMicroelectronics Increases Presence in RF Power Market with New Device Family Leveraging Advanced Proprietary Technology
STMicroelectronics has announced new radio-frequency (RF) power transistors built using an advanced technology that increases performance, ruggedness and reliability in vital demanding applications such as government communications, private mobile radio as used by emergency services, and L-band satellite uplink equipment.
RFMD To Showcase Industry-Leading High Performance RF Components At 2011 IEEE International Microwave Symposium
RF Micro Devices, Inc. has announced the Company will showcase its broad portfolio of industry-leading products and technologies for the wireless and wired broadband markets at the 2011 IEEE International Microwave Symposium (IMS) in Baltimore, Maryland, from June 6 to June 8, 2011.
Toshiba Expands GaN HEMT Product Family with Power Amplifier for Extended Ku-Band Satcom Applications
This week at the 2011 IEEE MTT-S International Microwave Symposium, Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the TGI1314-25L, a gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT), the latest addition to its power amplifier product family.
TriQuint demonstrates gallium nitride leadership by achieving key development milestones
TriQuint Semiconductor, Inc has announced several milestones related to its industry leading Gallium Nitride (GaN) developments. Together with customers and various US Government agencies, TriQuint is working to define the future of RF, where it believes GaN will play a key role.
90% Record Efficiency achieved using established GaAs RF Devices
Mesuro achieves record efficiencies and shares results of joint work with leading device manufacturers to design harmonically tuned, near theoretically-efficient power amplifiers (PAs) with existing RF transistor technologies.
AWR Announces Microwave Office Library For Freescale’s RF High-power Models
AWR Corporation, the innovation leader in HF EDA, today announced the availability of a Microwave Office® 2010 design software library for Freescale Semiconductor’s RF high-power models. Freescale’s validated RF high-power models enable power amplifier and base station designers to meet increasing performance demands with a cost-effective and timely solution.
AWR - Process Design Kit (PDK) For Cree GAN HEMT MMIC Foundry
AWR Corporation, the innovation leader in high-frequency electronic design automation (EDA), announced today the release and immediate availability of a new process design kit (PDK) supporting the Cree, Inc. high-power gallium nitride (GaN) high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) foundry process. The new Cree/AWR PDK enables MMIC designers to model Cree’s GaN HEMT MMIC process within AWR&rsquo...