Search results for "transistor"

Avago Technologies announced new power amplifier modules (PAMs) that extend handset talk time for GSM/EDGE communication. The new ACPM-7868 PAMs are fully compatible with Qualcomm’s newest generation of chipsets that support linear quad-band GSM/EDGE operation, enabling improved power efficiency for the world’s most widely-used cellular standard.

Avago Technologies has announced two new front end modules that incorporate a power amplifier, duplexer, band-pass filter and coupler to improve efficiency and extend talk time in mobile handsets. Avago’s AFEM-775x series includes Avago’s CoolPAM and Film Bulk Acoustic Resonator technologies to improve performance in CDMA cell band and dual-band handsets, wireless PDAs and wireless data cards.

By combining two buck converters with a low input voltage used to post-regulate the second buck converter, AnalogicTech’s AAT2782 and AAT2783 are said to extend battery life and reduce board footprint by powering both standard and the lower voltage noise sensitive circuits while maintaining high power efficiency.

Anglia Components have announced that it has been awarded the Mitsubishi Electric Europe Distributor Award 2011 for sales of High Frequency Semiconductor Components. Anglia is UK and Ireland distributor for the Mitsubishi HF Semiconductors Product Group, and booked the highest level of sales throughout Europe on the line during Mitsubishi’s 2011 financial year.

Anglia has announced that it has signed an exclusive agreement to both distribute and provide design support to the Mitsubishi range of high frequency semiconductors in the UK and Ireland. The product range addressed by the far-reaching deal encompasses silicon RF transistors, GaAs field-effect transistors (FETs), high electron mobility transistors (HEMTs) heterojunction bipolar transistors (HBTs), and RF modules. The devices and modules are targ...

Anglia has signed Diodes Incorporated, the US manufacturer of discrete semiconductor devices based in Westlake Village, California.

STMicroelectronics announces that GLOBALFOUNDRIES has agreed to manufacture devices for ST using ST’s proprietary Fully Depleted Silicon-on-Insulator technology in both the 28nm and 20nm nodes. The high-volume and timely availability of ST’s FD-SOI devices is essential in quenching the market’s appetite for smart phones and tablets that can handle all their stunning graphics, multimedia and high-speed broadband connectivity without sacrific...

Texas Instruments has introduced what it says is the first dual-level 200-mA low-dropout linear regulator with simple dynamic voltage scaling in a tiny, five-ball chip-scale package. The flexibility of this device benefits applications that require two levels of output voltage regulation for programming of eFUSE or SIM cards with additional memory, such as wireless handsets, PDAs, smart phones, MP3 players and other handheld devices.

STMicroelectronics has introduced a series of 30V surface-mount power transistors, achieving on-resistance as low as 2 milliohms (max) to increase the energy efficiency of products such as computers, telecom and networking equipment.

STMicroelectronics claims the world’s first device combining field signal-termination and protection functions, enabling designers of industrial control and building-automation equipment to increase system performance and EMI robustness while simultaneously cutting power consumption, size, and heat dissipation.