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Fujitsu Semiconductor today announced that it has achieved high output power of 2.5kW in server power-supply units equipped with gallium-nitride (GaN) power devices built on a silicon substrate. The company will exhibit the device for the first time at Embedded Technology 2012 Conference and Exhibition (Nov. 14-16 at the Pacifico Yokohama Convention Center in Japan), and will start volume production of the GaN power devices by the second half of ...

Microsemi has expanded its family of radio frequency transistors based on gallium nitride on silicon carbide technologies with a new S-band 500 watt RF device. The 2729GN-500 is targeted at high-power air traffic control airport surveillance radar applications. ASR is used to monitor and control aircrafts in the terminal within approximately 100 miles of an airport.

Jet Edge is pleased to announce that Precision Waterjet Concepts has installed a third Jet Edge waterjet cutting system at its full-service 5-axis and 3-axis waterjet cutting facility in Northern Minnesota. The thriving water jet cutting service now features three 3-axis waterjet systems and three 5-axis waterjet systems.

Bruker announced today that it has already received more than $7 million in orders for its new Bruker SP9900+ high-throughput high density interconnect (HDI) substrate metrology system, and has begun shipping the product in volume. The SP9900+ Large Format 3D Optical Microscope is specially designed for the semiconductor packaging industry and offers major advantages over previous generations of optical microscope technology. Dramatic improvement...

To meet the requirements of the most demanding motion control applications in industry and to satisfy the needs of high-precision positioning control requested by machine designers, Softstart UK has introduced the ASDA-A2 series of servo motors and servo drives.

Installation Snapshot • Replacement of 340 x 400W MV with 150W LED high bays • Over 60% reduction in energy needs • 460 tonnes annual reduction in CO2 emissions • Expensive maintenance eliminated • Improved safety and productivity • Payback just over two years As a leading consumer packaging company with 83 manufacturing sites across the globe, Rexam makes the packaging for many of the world’s favourite brands, striving t...

RF Micro Devices today announced it has been awarded a $2.1 million contract from the Defense Advanced Research Projects Agency to enhance the thermal efficiency of gallium nitride (GaN) circuits used in high power radar and other military systems.

In our Stand A4.134 at Electronica 2012, RFMD will showcase its industry-leading RF and microwave product portfolio for WiFi and Smart Energy, Wireless Infrastructure, GaN RF Power, Microwave MMIC solutions, Broadband Transmission, and Cellular Handsets.

Mitsubishi Electric has introduced a GaN High-Electron Mobility Transistor designed for Ku band amplifiers used in very small aperture terminal satellite earth stations. The new MGFK47G3745 provides an industry-leading output power of 50W and a power-added efficiency of 30%.

A new, vertical-spindle machining centre, which can be supplied in 3-axis or 5-axis configuration, has been added to the range manufactured by Hermle, Germany. Called C 400 Basic, it is available in the UK through sole agent, Geo Kingsbury Machine Tools, Gosport.