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International Rectifier has announced it will demonstrate the company’s industry-leading power management solutions at Electronica, Munich, November 13-16, 2012. The IR booth, located in Hall A5, Stand 320 will feature the company’s latest power management solutions for a wide range of applications including demonstrations of the newest motor control and automotive products and GaN-based power device platform, GaNpowIR.

Plessey today announced that it has been shortlisted for its new innovative MAGIC (MAnufactured on GaN ICs) High Brightness LED (HBLED) products in the Elektra Awards 2012 Solid-State Lighting Application Category. The winners will be revealed on Wednesday, 12 December 2012 at the European Electronics Industry Awards ceremony in London.

After extending its distribution agreement with Molex, TTI, Inc., the world’s largest specialist distributor of passive, discrete, connector and electromechanical components, can now offer a whole new range of sealed, unsealed and ruggedized connectors for the transportation and automotive sectors

ON Semiconductor has joined the multi-partner, industrial research and development program at imec, a leading nanoelectronics research center, to collaborate on the development of next-generation Gallium Nitride on silicon power devices.

ADS 2012 delivers new capabilities that improve productivity and efficiency for all applications it supports, as well as breakthrough technologies applicable to GaAs, GaN and silicon RF power-amplifier multichip module design.

Transphorm today announced a $35 million Series E financing led by Innovation Network Corporation of Japan and Nihon Inter Electronics Company, with participation from existing venture investors Kleiner Perkins Caufield & Byers, Foundation Capital, Google Ventures, Quantum Strategic Partners, Lux Capital, and Bright Capital.

RF Micro Devices have today introduced multiple leading-edge GaN-based CATV amplifiers, in conjunction with the SCTE Cable-TEC Expo in Orlando, FL. The new CATV amplifiers include the RFPD2940 – a best-in-class, high-power GaN-based CATV power-doubler amplifier, as well as a new family of GaN-based push-pull CATV amplifiers, led by the RFPP2870 and RFCM3080.

RF Micro Devices announced today the Company will showcase its portfolio of industry-leading wired broadband components at the SCTE Cable-Tec Expo 2012, to be held October 17-19, 2012, in Orlando, Florida.

TriQuint has won a new gallium nitride contract from the Defense Advanced Research Projects Agency to enable a threefold increase in circuit power handing. The Near Junction Thermal Transport effort will focus on reducing heat that can limit GaN circuit capabilities in defense and commercial systems.

Transphorm have revealed the JEDEC qualification of the company’s TPH2006PS, GaN HEMT on SiC substrate, making it the industry’s first qualified 600V HEMT device. The TPH2006PS, based on its patented, high-performance EZ-GaN technology, combines low switching and conduction losses resulting in reduced energy loss of up to 50% compared to conventional silicon-based power conversion designs, today.