Search results for "gan"
Yole Développement’s LED & Power Electronics seminar takes place on January 29, 2013 in Seoul, South Korea
Yole Développement has organized an LED & Power Electronics seminar in South Korea for January 29, 2013 – just prior to SEMICON Korea. Dedicated to the areas of LED and Power Electronics, the seminar will consist of Yole Développement presentations on the aforementioned market areas, along with presentations from System Plus Consulting on their Reverse Costing and Cost Simulation tools. Featured speakers are Dr. Philippe Roussel, Yole Dévelo...
Freescale Enhances Verification Productivity with Synopsys Verification IP
Synopsys today announced advancements in its longstanding verification collaboration with Freescale Semiconductor. With a focus on addressing the increasing complexities of system-on-chip (SoC) verification, Freescale teams are leveraging Synopsys' innovations in next-generation verification IP (VIP), simulation performance, debug technology and methodology development.
Apex Factory Automation To Show Mirae Placement Solutions At IPC Apex
Apex Factory Automation will be highlighting their newest SMT placement systems for high-mix, high speed applications. Mirae produces the linear motor based systems. Their features and capabilities will be demonstrated live at booth #1117. The Mx400 Series feature advanced linear motor technology providing speed and placement accuracy of 25µ. These flexible SMT assemblers are capable of placing 01005’s (0402 metric) through 3.5” X 1.18” (9...
U.S. Army’s Legendary Blackhorse Regiment Installs Jet Edge Water jet System
Jet Edge is honoured to announce that the U.S. Army’s legendary 11th Armoured Calvary Regiment has installed a Jet Edge precision water jet cutting system at its home base in Fort Irwin, Calif. Known for its tough and uncompromising standards, the 11th ACR, “the Blackhorse Regiment,” is widely respected as the best Opposing Force in the world.
Agilent Unveils New IC-CAP Platform for Device Characterization and Modeling
Agilent Technologies today announced the latest release of its device modeling software platform, the Integrated Circuit Characterization and Analysis Program. With IC-CAP 2013.01, Agilent introduces major improvements to its flagship product for high-frequency device modeling. One key improvement is turnkey extraction of the Angelov-GaN model, the industry standard compact device model for GaN semiconductor devices.
Plessey's Innovative MAGIC High Brightness LEDs win the Solid-State Lighting Application Category in Elektra Awards 2012
Plessey today announced that its new innovative MAGIC (MAnufactured on GaN ICs) High Brightness LED products have won the Solid-State Lighting Application Category of the Elektra Awards 2012. The winners were revealed last week at the European Electronics Industry Awards ceremony in London.
NXP takes GaN mainstream at EuMW 2012
At European Microwave Week 2012 we demonstrate our GaN portfolio: CLF1G0060(S)-10, CLF1G0060(S)-30, CLF1G0035(S)-50, CLF1G0035(S)-100, CLF1G0035(S)-100P and CLF1G0035(S)-200P. Features include:
Agilent's New ADS Software Advances Design of RF Power Amplifiers
Agilent Technologies has today revealed shipment of Advanced Design System 2012, its flagship RF and microwave EDA software platform. ADS 2012 features new capabilities that improve productivity and efficiency for all applications the system supports and breakthrough technologies applicable to GaAs, GaN and silicon RF power-amplifier multichip module design.
High-Power GaN HEMT Power Amplifiers
RFMD’s new RFHA104x series of high-power GaN broadband power transistors are optimized for military communications, commercial wireless infrastructure, and general purpose applications. Using an advanced 65V high power density GaN semiconductor process optimized for high peak-to-average ratio applications, these high-performance amplifiers achieve high power with high efficiency and flat gain over a broad frequency range in a single amplifier d...
RFMD Releases Family of Linear GaN Power Transistors
RF Micro Devices today announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors—RFHA3942 (35W) and RFHA3944 (65W)—that deliver superior linear performance versus competing GaN transistors.