Search results for "transistor"
NXP Delivers World’s First Low VCEsat Double Transistors in 2-mm x 2-mm Leadless Package
NXP Semiconductors today introduced the industry’s first double transistors with low saturation voltage in a 2-mm x 2-mm DFN (discrete flat no-leads) package. The 15 new types are available immediately in a leadless, low-profile DFN2020-6 (SOT1118) package, with collector voltages (VCEO) of 30, 60 and 120 V (PBSS4112PAN).
Samsung Tops Optoelectronics Ranking After Absorbing LED Venture
Samsung Electronics catapulted to the top of the optoelectronics supplier ranking in 2012 from 12th place in 2011 after it gained full ownership of Samsung LED, a 50-50 joint venture in light-emitting diodes that was created in 2009 between Samsung Electronics and affiliate Samsung Electro-Mechanics. In April 2012, the venture was absorbed into Samsung Electronics to strengthen and expand the use of high-brightness LEDs in displays, LCD TVs, and ...
Micronas Standardizes on Synopsys' Design and Verification Solutions for Automotive Designs
Micronas and Synopsys Inc today announced that Micronas has standardized on Synopsys' custom and digital solutions for the design and verification of semiconductors used in automotive and industrial applications. The solution includes Galaxy Custom Designer for custom IC design, HSPICE for circuit simulation, StarRC for gate-level and transistor-level extraction, IC Compiler for place and route, IC Validator for physical verification and VCS for ...
Freescale Ships Over 175 Million Plastic-Packaged RF Power Transistors
Freescale Semiconductor have recently reached a milestone unparalleled in the industry – shipment of more than 175 million high-power, high-frequency RF power transistors in plastic packages. Freescale's RF power over-molded plastic packaging provides cost-effective and reliable alternatives to conventional, more expensive metal-ceramic packaging. Freescale’s plastic packaging withstands and dissipates the high heat levels generated by RF pow...
IR Enhances Online IGBT Product Selector and Performance Evaluator Tool
International Rectifier today announced the enhancement of its Insulated Gate Bipolar Transistor (IGBT) selection tool that enables design optimization in a wide range of applications including motor drives, uninterruptable power supplies (UPS), solar inverters, and welding.
NXP Unveils GreenChip for Compact, Energy-Efficient Mobile Charging
While the line between “smartphones” and “tablets” becomes increasingly blurry, it’s clear that the charger for either device needs to be as small, lightweight and efficient as possible. At APEC 2013 today, NXP Semiconductors introduced its new GreenChip solution designed to make smartphone and tablet chargers more compact, energy-efficient and cost-effective – without sacrificing reliability.
Micronas Standardizes on Synopsys' Design and Verification Solutions for Automotive Designs
Micronas and Synopsys Inc today announced that Micronas has standardized on Synopsys' custom and digital solutions for the design and verification of semiconductors used in automotive and industrial applications. The solution includes Galaxy Custom Designer for custom IC design, HSPICE for circuit simulation, StarRC for gate-level and transistor-level extraction, IC Compiler for place and route, IC Validator for physical verification and VCS for ...
CISSOID Announce New High-Temperature 1200V/10A SiC MOSFET
CISSOID introduces CHT-NEPTUNE, a high-voltage power switch in TO-257 package, suitable for power converters and motor drives guaranteed for reliable operation up to +225°C. CHT-NEPTUNE is a high-temperature, high-voltage, Silicon Carbide MOSFET specifically built for power converter applications in high-temperature and harsh environments.
Infineon Introduces 650V Rapid 1 and Rapid 2 Families
Today at the Applied Power Electronics Conference & Exposition (APEC) 2013, Infineon Technologies introduced the highly efficient, fast recovery 650V 650V Rapid 1 and Rapid 2 silicon diode families. Combining Infineon’s ultrathin wafer manufacturing expertise for a low loss vertical structure plus unique cell design, the Rapid diodes provide outstanding performance.
Altera To Build High-Performance FPGAs On Intel's 14 nm Tri-Gate Technology
Altera and Intel have today revealed that the companies have entered into an agreement for the future manufacture of Altera FPGAs on Intel's 14 nm tri-gate transistor technology. These next-generation products, which target ultra high-performance systems for military, wireline communications, cloud networking, and compute and storage applications, will enable breakthrough levels of performance and power efficiencies not otherwise possible.