Search results for "SiC"

České Radiokomunikace (ČRa) has selected the LoRa wireless RF technology from Semtech Corporation as the RF platform for the company’s first Internet of Things (IoT)-based pilot programme. Working with network partners RWE GasNet and Softlink, ČRa has developed a LoRa-based solution that was tested in the spring of 2015 and has now been launched in select markets.

With the aim of producing high-quality X-rays with minimal radiation exposure, particularly in children, researchers have developed a new approach to imaging patients. Surprisingly, the new technology isn’t a high-tech, high-dollar piece of machinery. Rather, it’s based on the Xbox gaming system.

Infineon Technologies increases performance and security of contactless payment transactions. The SLC 32P family of security controllers speeds up data handling by the factor of 15. It enables manufacturers of payment cards, wearables and proximity devices such as tokens to meet requirements mandated by MasterCard from January 2016 onwards.

Satoshi Yamakawa and co-workers at Mitsubishi Electric have developed a new power module made from an SiC MOSFET and an SiC Schottky barrier diode. As reported in the Japanese Journal of Applied Physics, the team successfully trialed the module in a train traction inverter – a device used to convert the direct current from the power source to three-phase alternating current suitable for driving the propulsion motors – with promising r...

Availability and full design support capabilities for a new 2W GaN driver amplifier from Qorvo have been announced by distributor Richardson RFPD. The TGA2958-SM is a packaged Ku-band amplifier fabricated on Qorvo’s 0.15um GaN on SiC production process (QGaN15). Operating over a 13-18GHz bandwidth, the device delivers 2W of saturated output power with 20dB large signal gain and > 25% power added efficiency.

Wolfspeed, A Cree company, continues its innovation in SiC power device technology and packaging with the introduction of the industry’s first 1,700V SiC MOSFET offered in an optimised surface mount package designed for commercial use in auxiliary power supplies in high voltage power inverter systems.

Showa Denko (SDK) has developed a new grade of SiC epitaxial wafers for power devices with very low defect density. This month, SDK will start commercial shipments of the recent grade, in 4 and 6" in diameter, under the trade name of 'High-Grade Epi' (HGE). When compared with the mainstream Si-based semiconductors, SiC-based power devices can operate under high temperature, voltage and current conditions, while substantially reducing energy loss.

A new 1700V SiC MOSFET from Wolfspeed is available from distributor Richardson RFPD with full design support capabilities. The C2M1000170J features high blocking voltage with low RDS(on), low parasitic inductance, ultra-low drain gate capacitance, and a separate driver source pin. It is easy to parallel and simple to drive.

The R&S Spectrum Rider from Rohde & Schwarz assists users during RF transmitter installation and maintenance and also supports measurement tasks in RF development labs and in service. It offers high sensitivity of -160dBm and measurement accuracy of typically 0.5dB between 10MHz and 3GHz.

AtSPS IPC Drives,24th to 26th November, Nuremberg, ROHM will present its latest power modules for high-reliable, high-speed switching as well as SiC MOSFET driving(Hall 1 - Booth 320). All devices offer not only optimised power management features, but also innovative and compact package designs tailored to the needs of a wide range of applications, e.g. large power supplies, inverters, industrial equipment and servers.