Search results for "SiC"

Ampleon has introduced its 2nd gen 50V 0.5µm GaN on SiC RF power transistors, dedicated for mobile broadband applications. Providing a 5% improvement in power efficiency compared to LDMOS-based devices and enabling high-power multiband applications, this GaN family also offers a size reduction in the order of 30 to 50%, when compared to similar LDMOS transistors.

Qorvo has unveiled three DOCSIS 3.1-ready power doubler multi-chip modules (MCMs). Qorvo’s latest power doubler MCM amplifiers provide cable broadband service providers an easy upgrade path to DOCSIS 3.1 with maximum design flexibility and functionality while conserving power and reducing board space.

STMicroelectronics has announced advanced high-efficiency power semiconductors for EVs & HEVs with a timetable for qualification to the AEC-Q101 automotive standard. In EVs and HEVs, where better electrical efficiency means greater mileage, ST’s latest SiC technology enables auto makers to create vehicles that travel further, recharge faster and fit better into owners’ lives.

The debut of ROHM Semiconductor at the Hanover Trade Fair 2016: a look behind the scenes at the Japanese semiconductor manufacturer that offers forecasts on the industrial market, while at the same time identifying the goal that ROHM is pursuing with Industry 4.0 technologies – a double network for machines and organizations.

For applications that demand efficiency, reliability and thermal management, such as solar inverters, EV/HEV charging station, industrial power supplies, industrial drives, welding and plasma cutting, Littelfuse has introduced the LFUSCD series of SiC Schottky diodes.

At PCIM Europe 2016, Rohm Semiconductor introduced its third generation SiC Schottky barrier diodes, whih it believes is the first of their kind rated at 650V at 6.0, 8.0 and 10A.

Based on the company’s 2nd gen SiC semiconductor technology, Toshiba Electronics Europe has introduced Schottky Barrier Diodes (SBDs) which deliver current densities up to 50% higher than previous-gen devices and can handle significantly higher forward surge currents.

Maximising the performance characteristics of SiC, Infineon has announced it is sampling 1,200V SiC MOSFETS. The CoolSiC MOSFETs are available in three- and four- pin package options and improve dynamic loses, especially at high currents.

Availability and full design support capabilities for a new 2.8–3.2GHz 50W GaN Amplifier from Qorvo are announced by Richardson RFPD. The QPA1000 is a high-power, S-band amplifier fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process. The device provides greater than +47 dBm of saturated output power and greater than 24dB of large-signal gain, while achieving more than 58% power added efficiency.

Vincotech helped generate 13GW of solar energy in 2015 with power modules installed in solar inverters that account for around 25% of that year's global yield. Vincotech’s persistent innovation and quality service have produced components that are saving more than 17m tons of carbon dioxide equivalents (MMTCDE) every year, which is tantamount to planting some 440m trees.