Search results for "igbt"

NEC Electronics introduces a new family of High Speed Optocouplers coming in a new white DIP package that provides enhanced isolation and shielding characteristics: 5000 Vrms isolation voltage; >0.4mm internal isolation distance; >8mm outer creepage distance; Minimum CMR of 15KV/µs.

International Rectifier lance un nouvel outil Internet de sélection de transistors IGBT permettant d’optimiser la conception d’un large panel d’applications telles que la commande moteur, les alimentations de puissance sans interruption (UPS), les inverseurs pour panneaux solaires et la soudure.

International Rectifier has introduced the AUIRS2301S 600V IC for automotive motor drives, micro inverter drives and general purpose three-phase inverter applications.

Mitsubishi Electric has introduced a new High Voltage Integrated Circuit (HVIC) to drive IGBT power modules dedicated for 400V AC lines. The new device M81738FP is suitable for 1200V-class IGBT and has got industry leading high noise immunity and withstand capability to voltage undershoots.

Le circuit de commande de grille 10 A ZXGD3005E6 de Diodes Incorporated est conçu pour assurer une commutation ultra-rapide des MOSFET de puissance et des IGBT dans les alimentations, les convertisseurs solaires et les commandes de moteur. Avec sa configuration émetteur - suiveur qui assure un délai de propagation de moins de 10 ns et des temps de montée et descente de moins de 20 ns, cette commande de grille non inverseur réduit les pertes ...

Agilent Technologies Inc today introduced enhancements to the B1505A Power Device Analyzer/Curve Tracer to make it the industry's first single-box solution able to characterize semiconductor devices up to 40 amps and 3000 volts.

The ZXGD3005E6 10 Amp gate driver from Diodes Incorporated has been designed to ensure ultra fast switching of power MOSFET and IGBT loads in power supply, solar inverter and motor drive circuits. With its emitter follower configuration delivering propagation delay times of less than 10ns and rise and fall times of less than 20ns, this non inverting gate driver will reduce switching losses, simplify circuit design and improve overall system reli...

Hitachi's Power Devices Division has announced two high voltage IGBT modules. The new 3.3KV MBN1000E33E2 and MBN1500E33E2 IGBT modules offer a current rating of 1000 Amp and 1500 Amp respectively. The new modules are manufactured using Hitachi’s new E2 series fine pattern silicon process technology which enables a more cost effective production process, increased current capability and an increase in the active silicon cell area. The use of...

ROHM has recently announced the industry’s first mass production of SiC power modules (1200V/100A rated) comprised entirely of SiC power elements as custom module. Incorporating SiC inverters and converters for power conversion in industrial equipment provides a number of advantages over typical silicon-based IGBT modules such as switching loss reduction by 85%, approximately 50% less volume compared to conventional 400A-class Si IGBT modules a...

In a breakthrough that redefines performance and energy efficiency in high-power applications, Cree announces a new family of 50A Silicon Carbide (SiC) devices, including the industry's first 1700V Z-FETT SiC MOSFET.