Search results for "transistor"
Plastic LCDs for autonomous vehicle interior concept
FlexEnable is collaborating with Yanfeng Automotive Interiors to create an Invisible A-pillar concept for an autonomous demonstrator. FlexEnable provided a 12.1” glass-free, conformable OLCD that has been incorporated into a car’s A-pillar to allow for greater visibility and safety. The demonstrator was included in YFAI’s XiM17 autonomous concept interior that made its world debut at the 2017 North American Auto Show (NAIAS) in ...
Technological progress alone won’t stem resource use
Are humans taking more resources from the Earth than the planet can safely produce? The answer lies partly in whether we can “dematerialise,” or reduce the amount of materials needed to produce goods and services.While some scientists believe that the world can achieve significant dematerialisation through improvements in technology, a new MIT-led study finds that technological advances alone will not bring about dematerialisation and...
Cooperating subsystems drive the car of the future
Controlled by a computer that is able to not only monitor what is happening inside the vehicle but the driving environment around and in front of it, the car of the future will be a fusion of electronic senses. And what it learns will influence much more than the car’s steering. By Simon Duggleby, Technical Marketing Manager, Electronics, RS Components.
Company joins AirFuel Alliance to assist wireless charging development
GaN Systems has joined theAirFuel Alliance, a global, nonprofit consortium of industry leaders responsible for developing wireless charging standards. GaN Systems will aid the alliance by bringing its wireless technology experience, by extending beyond the previously assumed limits of wireless charging, and by assisting the development of global wireless charging standards.
50V GaN RF transistors operate from DC to 4GHz
Availability and full design support capabilities for two new GaN on SiC RF transistors from Qorvo have been announced by Richardson RFPD. The new discrete GaN on SiC HEMTs operate from DC to 4GHz. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2GHz, and a linear gain of 24dB at 2GHz.
Diodes made from semiconductor materials perform better than silicon
Sandia National Laboratories researchers have shown it's possible to make transistors and diodes from advanced semiconductor materials that could perform much better than silicon, the workhorse of the modern electronics world.The breakthrough work takes a step toward more compact and efficient power electronics, which in turn could improve everything from consumer electronics to electrical grids.
GaN RF transistors offer array of frequency ranges
QPD gallium nitride (GaN) radio frequency (RF) transistors from Qorvo are now in stock at Mouser Electronics. Built on Qorvo's high-performance GaN on silicon carbide (SiC) technology, these high-electron-mobility transistors (HEMTs) with a single-stage matched power amplifier transistor offer a wide array of frequency ranges, output power, and operating voltages for high-efficiency applications.
High-speed deposition process outperforms current techniques
Fast and industry-compatible, spatial atomic layer deposition (sALD) promises to revolutionise production of thin-film displays. Now researchers at Holst Centre have shown that sALD can deliver semiconductor layers with better performance than physical vapor deposition (PVD) at the same – and potentially even higher – throughputs. An easily scalable, atmospheric-pressure process, sALD could soon become the preferred method for creatin...
Automotive radar MCUs enable higher accuracy and safety
Renesas Electronics has announced its first RH850-based, 32-bit, automotive radar microcontroller (MCU) series. The RH850/V1R will deliver the high performance and features required for enabling future Advanced Driver Assistance Systems (ADAS) and autonomous driving vehicles.
Devices sensitive to visible light
A light-sensing device that integrates photodiodes below the Buried Oxide (BOX) of FDSOI transistors has been developed by Leti, making the transistors sensitive to visible light.In this work, photodiodes were co-integrated in the SOI substrate, replacing conventional FDSOI transistor backgate.