Search results for "transistor"
Interface enables information transport by spin
Modern computer technology is based on the transport of electric charge in semiconductors. But this technology’s potential will be reaching its limits in the near future, since the components deployed cannot be miniaturised further. But, there is another option: using an electron’s spin, instead of its charge, to transmit information. A team of scientists from Munich and Kyoto is now demonstrating how this works.
THz chips: a way of seeing through matter
Electromagnetic pulses lasting one millionth of a millionth of a second may hold the key to advances in medical imaging, communications and drug development. But the pulses, called terahertzwaves, have long required elaborate and expensive equipment to use.Now, researchers at Princeton University have drastically shrunk much of that equipment: moving from a tabletop setup with lasers and mirrors to a pair of microchips small enough to fit on a fi...
Microwave components suit RF communications
CEL is introducing low cost pHEMTs (pseudomorphic High Electron Mobility Transistor) targeted for Ku and Ka Band Satellite Receiver applications. These CEL pHEMTs are drop-in replacements to the Renesas pHEMTs, also offered by CEL.Typical applications are LNBs (Low Noise Block) in Digital Broadcast Systems (DBS), and downconverters in VSAT systems and 24GHz sensors. These new low noise pHEMTs are also excellent for a variety of other microwave an...
GaN transistors enhance accuracy of power system simulations
GaN Systems has witnessed a surge in the number of customers designing and deploying power systems using their GaN transistors. Customers have recognised that GaN devices significantly improve power efficiency and power density.
GaN-on-Silicon optimises high electron mobility transistors
A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimising the composition of the semiconductor layers that make up the device. Working with industry partners Veeco and IBM, the team created the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate with a process that will scale to larger industry-standard wafer sizes.
DC/DC converters meets railway technology
The trend throughout the electronics industry towards ever higher packing densities has left its mark on DC/DC converters, as Recom introduces models with 20 to 120W output
Relays in safety-related control systems
There are no fewer than seven ways for even a simple transistor to fail. This means that monitoring all the electronic components that may be defective in a safe electronic switching output calls for considerable effort and the use of such things as a clocked fail-safe unit and microcontrollers (Figure 1).
GaN Systems momentum grows as 2017 begins
As 2017 begins to unfold, I’d like to recount some of last year’s key accomplishments and provide some perspective on our expectations for the New Year. Looking back, I am struck by the number of significant gains GaN Systems enjoyed last year pertaining to the adoption of GaN technology by customers, as well as the global growth of our sales and support ecosystem. Some of our 2016 key developments include:
DC/DC converters designed for automotive applications
A range of primary switched DC/DC converters with 400W output power has been released by MTM Power, especially designed for automotive applications. They operate according to the push-pull principle; i. e. the input DC voltage is chopped by two push-pull working transistors with a frequency of approximately 60kHz.
3D solutions provide energy savings in silicon power transistor
Tokyo Tech researchers demonstrate operation energy-savings in a low price silicon power transistor structure by scaling down in all three dimensions.In electronics, lower power consumption leads to operation cost savings, environmental benefits and the convenience advantages from longer running devices. While progress in energy efficiencies has been reported with alternative materials such as SiC and GaN, energy-savings in the standard inexpensi...