Search results for "igbt"

International Rectifier, has introduced the IR115x family of µPFC™ power factor correction (PFC) ICs for a wide variety of AC-DC applications including lighting, LCD/PDP TV and game console Switch Mode Power Supplies (SMPS), fans, air conditioners, and uninterruptible power supplies (UPS) ranging from 300 W to 8 kW.

Mitsubishi Electric is introducing an Evaluation Board for its Intelligent Power Modules (IPMs) of the entire L1/S1 Series. The new board named EVBL1S1XX enable the design engineer to functionally test the features and the performance of these IPMs from Mitsubishi Electric. The board can be used as a reference design regarding layout and selected components.

Mitsubishi Electric is introducing its new Intelligent Power Module (IPM) of the L1-Series featuring high-speed, low-loss IGBT chips with full gate CSTBT (Carrier-Stored Trench Gate Bipolar Transistor). In addition to the mechanical compatibility with existing L-Series IPMs, the L1-Series family covers an additional small package with improved performance.

Mitsubishi Electric has launched the new V1-Series as part of the IPM (Intelligent Power Module) line-up. V1-Series is a new intelligent power module which is mainly developed to increase the efficiency of motor drives and power supplies like DC/DC converters. The V1-Series IPM is focussing on applications in the two digit kW- class offering a respective line-up of 200A/300A/450A in 1200V and 400A/600A in 600V.

ON Semiconductor has published the latest edition of its Master Components Selector Guide. This 370-page document has comprehensive specification data for the company’s entire portfolio of components and the various package types they are offered in.

ON Semiconductor today introduced a new series of Field Stop Insulated Gate Bipolar Transistors (IGBTs) targeted at industrial motor control and consumer products. The NGTB15N120, NGTB20N120 and NGTB25N120 enable high performance power conversion solutions for a wide range of demanding applications, including induction cook tops, rice cookers and other small kitchen appliances.

Fast switching generated by IGBTs causes high voltage ramps (greater than 4000V/µs), that may be even higher in the motor windings. The fast switching can also shorten the motor life and limit the maximum cable lengths.

CISSOID, the leader in high-temperature semiconductor solutions unveils RHEA, a high temperature data transmission solution with galvanic isolation of 2.5kV and operating reliably from -55°C to +225°C. The CHT-RHEA is a single chip dual channel, full duplex transceiver (2 transmit and 2 receive channels). The magnetic isolation on each channel is ensured by an external tiny pulse transformer, of which the core diameter does not exceed 6mm (0.24...

CISSOID launched HADES, the first isolated gate driver solution designed to drive high temperature power transistors, specifically (but not exclusively) Silicon carbide (SiC) and Gallium nitride (GaN) fast-switching devices. With HADES, system engineers can develop power converters that are 5 times smaller and lighter than before, with better efficiency. They will also get power converters able to operate in high temperature ambiance if required....

Hitachi Europe Ltd, Power Devices Division (PDD) will exhibit its leading-edge IGBT technology and the latest power semiconductors modules at PCIM 2009 which is being held from May 12th to May 14th 2009 at the Exhibition Centre Nuremburg, Germany.