Memory

A 4Kb I2C Serial Presence Detect (SPD) EEPROM, designated the 34AA04, has been introduced by Microchip Technology. The device is specifically designed to work with the next generation of Double Data Rate 4 (DDR4) SDRAM modules used in high-speed PCs and laptops, while also supporting older DDR2/3 platforms.

  The S8 SD/MMC flash memory controller, launched by Hyperstone, is suited for applications such as SDHC, SDXC, SD (SecureDigital), smartSD, smart microSD, high speed and UHS-I memory cards as well as e•MMC MCP modules.

Expanding the company's portfolio of high-speed CMOS synchronous DRAMs (SDRAMs), Alliance Memory has introduced the 2m x 32 AS4C2M32S-6TIN, AS4C2M32S-6BIN and AS4C2M32S-7BCN; 4m x 32 AS4C4M32S-6TIN, AS4C4M32S-6BIN and AS4C4M32S-7BCN; and 8m x 32 AS4C8M32S-7BCN x32 devices in the 90-ball 8x13x1.2mm TFBGA, and 86-pin 400-mil plastic TSOP II packages.

Fujitsu Semiconductor release the MB85RC1MT, a 1Mb FRAM product with I2C interface. This represents the highest memory capacity of the company's line-up for the I2C serial interface and is offered in an industry-standard SOP-8 package that is pin-compatible with EEPROM and Flash memory.

CEA-Leti has fabricated ultra-scaled split-gate memories with gate length of 16nm and demonstrated their functionality, showing good writing and erasing performances with memory windows over 6V. The devices provide several benefits especially for contactless memory applications, such as enlargement of the memory window and increased functionality. Also because of an optimised fabrication step, the devices allow better control of spacer memor...

A line of high-speed CMOS DDR2 SDRAMs has been announced by Alliance Memory. The devices feature densities of 512Mb (AS4C32M16D2) and 1Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball 8 x 10 x 1.2-mm and 84-ball 8 x 12.5-x 1.2-mm FBGA packages.

A range of SLC NAND flash memory has been expanded upon with the introduction of embedded 8-bit ECC. The range of  24nm BENAND SLC NAND flash memory, from Toshiba Electronics Europe, enables manufacturers to utilise the latest 24nm technology in devices that were designed to use 4xnm NAND. This results in extended product life for devices such as consumer electronics, multimedia devices, smart meters, ...

A line of high-speed CMOS DDR SDRAMs with densities of 64Mb, 128Mb, 256Mb and 512Mb has been announced by Alliance Memory. The 64Mb (AS4C4M16D1-5TIN), 128Mb (AS4C8M16D1-5TIN), 256Mb (AS4C16M16D1-5TIN), and 512Mb (AS4C32M16D1-5TIN) devices havew an industrial temperature range of -40°C to +85°C.

Designed for nearline business-critical workloads, the MG04 series 7,200 RPM HDDs have been released by Toshiba. Available in capacities up to 5TB (terabyte), Toshiba have claimed that these HDDs are the industry’s first enterprise capacity drives to feature Persistent Write Cache technology. This enables improved application performance and data-loss protection in the event of unexpected power loss.

Targeted specifically for DRAM designs, Digital Core Design has introduced the DEEPROM IP Core. Suitable for applications requiring data storage in external non-volatile memories, the DEEPROM performs communication and exchanges data between external serial EEPROM Memory and CPU’s RAM memory interface.