Memory

Samsung has introduced what the company believes to be the first eight Gb low power double data rate 4 (LPDDR4) mobile DRAM. Offering the highest level of density, performance and energy efficiency for mobile memory applications, the high-speed mobile DRAM enables end users to have faster, more responsive applications, more advanced features, and higher resolution displays while maximizing battery life.

Implementing innovative memory solutions may help add stability to the power/performance balancing act developers must not endure when selecting a new MCU. Philip Ling, ES Design magazine Editor, explores the issues further in this article.

Swissbit is stepping into the security market with its new business unit “Security”. Hubertus Grobbel, head of the new division, explains the background and reasons behind the move, as well as its goals.

Extending its 64M and 128M lines of high-speed CMOS synchronous DRAMs, Alliance Memory has today introduced a new 2M x 32 device in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA package and a 4M x 32 device in the 86-pin 400-mil plastic TSOP II package. The AS4C2M32S-7TCN and AS4C4M32S-7TCN provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom, and consumer products requiring high memor...

Toshiba have today unveiled a 32-gigabyte embedded device which integrates four 64Gbit (equal to 8GB) NAND chips fabricated with 19nm second generation process technology. Measuring only 11.5 x 13 x 1.0mm, it also comes with a dedicated controller.

The new 74LV family of low voltage CMOS logic parts has today been unveiled by Diodes Inc. When comparing against legacy 74AHC and 74HC alternatives, the 74LV family offers speed and power advantages and are provided in a choice of 14-pin TSSOP and SOIC packages. The devices are ideal for use in a wide range of computing, networking and consumer electronic products.

The hybrid drive combines the cost advantage of rotating magnetic disc storage with the high performance of NAND flash memory. This new technology has recently been attracting attention from computer users looking for fast, large capacity drives. Mine Budiman, Eric Dunn & Rick Ehrlich, Toshiba Storage Products Division, explore more in this article from ES Design magazine.

Renesas Electronics have today announced the introduction of 12 new product versions in the RMLV0416E, RMLV0414E, and RMLV0408E series of Advanced Low-Power SRAM, the company’s flagship static random access memory devices. The new memory devices have a density of 4 megabits and utilize a fine fabrication process technology with a circuit linewidth of 110 nanometers.

Alliance Memory introduce a new line of high-speed CMOS double data rate synchronous DRAMs  with densities of 64 Mb (AS4C4M16D1), 128 Mb (AS4C8M16D1), 256 Mb (AS4C16M16D1), and 512 Mb (AS4C32M16D1). These devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in medical, communications, industrial, and consumer products requiring high memory bandwidth, and they are particularly well-suited to ...

Greenliant Systems announces that it has begun volume production of 16 GB and 32 GB industrial grade SATA NANDrive embedded solid state drives using 1-bit-per-cell NAND flash memory. The GLS85LS1016P and GLS85LS1032P devices are ideal for long-life products that need high-endurance storage for user data and applications in a small, ball grid array form factor.