Memory

Mouser Electronics is now stocking Parallel F‑RAM Non-Volatile Memory from Cypress Semiconductor. The family of Ferroelectric Random Access Memories (F-RAMs) read and write just like conventional SRAM while retaining data when power is removed just like Flash memory. These highly-reliable F-RAMs feature a variety of interface and density options, are available in memory sizes ranging up to 4 Mbit, and provide data retention for up to 151 years.

Synopsys has announced VIP (Verification IP) for LPDDR4, based on a 100% native SystemVerilog Universal Verification Methodology (UVM) architecture to enable ease of use, ease of integration and performance. Complete with verification plans, built-in coverage and a protocol-aware memory debug environment, Verdi Protocol Analyzer, Synopsys VIP for LPDDR4 is a complete VIP solution that accelerates verification closure for designers of low power me...

With the demand for industrial SSD increasing significantly as the IoT sweeps across the world, Apacer has launched two slim industrial SATA3.0 SSDs. According to Gartner's market survey, the demand for relevant devices will increase to 26bn sets, as the IoT market scale will reach $1.09 trillion in 2020. The SFD18SH-M complies with the JEDEC MO-297 standard, and the mSATA H1-M with the MO-300 standard.

SRAM memory devices, which have a density of 8Mb, have been released by Renesas Electronics Europe. Expanding the company’s RMLV0816B and RMLV0808B series of Advanced Low-Power SRAM (Advanced LP SRAM), the devices utilise a fine fabrication process technology with a circuit linewidth of 110nm.

An ultra-low-power FRAM device with an integrated binary counter function, the MB85RDP16LX has been introduced by Fujitsu Semiconductor Europe. Capable of enabling self-powering solutions such as the Wiegand wire-based platform from iC-Haus, the FRAM targets industrial automation applications involving energy harvesting for rotary encoders, motor control and sensors.

According to Yole Développement, both the compute (DDR3/DDR4) and mobile varieties (LPDDR3/LPDDR4) of DDR memory will reach the end of their respective journeys soon, as the DDR interface reportedly cannot run at data rates higher than 3.2Gb/s in a traditional computer main memory environment. Several DRAM memory architectures based on 3D layer stacking and Through-Silicon-Via (TSV) have evolved to carry memory technology forward...

Toshiba announces two eSSDs, the HK3E2 for value-endurance workloads and the HK3R2 drive for read intensive workloads. These 6Gb/s SATA Enterprise SSDs join Toshiba’s broad portfolio of enterprise storage solutions featuring a variety of endurance ratings to meet the needs of specific application requirements and customer environments.

Flash memory is a popular form of electronic data storage commonly used in devices such as smartphones, cameras and memory sticks. However, there is a physical limit to the minimum size of the current design of data cells, which currently use metal-oxide-semiconductor components.

At electronica 2014, from 11th to 14th November, Swissbit will be presenting it’s first DDR4 ECC SODIMM. Using the 4th gen DDR, the device can achieve higher data rates than when used with the DDR3, while consuming the same amount of power consumption. Featuring optimised data bus termination, dynamic bus inversion and CRC protection of the command/address bus, the 8GB SODIMM is designed for next-gen embedded boards.

Dolphin Integration has announced MyDolphin, a free evaluation platform. Users on MyDolphin can evaluate its memory offering, thanks to free online generators and presentation sheets.