Memory

Integrated Device Technology has announced a high-speed multiplexer targeting the nascent NVDIMM (non-volatile dual in-line memory module) ecosystem. The 12-bit bus switch/multiplexer features a make-before-break circuit that prevents glitches when switching and AC and DC parameters optimised for DDR4, enabling the highest possible memory channel performance for NVDIMMs even when intermixed with other DIMM types.

IC Insights’ recently released 2015 edition of 'The McClean Report' shows that DRAM bit volume grew by an average of 67% per year from 1995-2005. In the 10 years since then, however, bit volume growth has averaged 43% per year (see figure below). A worldwide economy mired in recession reduced bit volume growth to an all-time low of 21% in 2009, a big contrast to the 1990s when annual DRAM bit volume growth remained above 70%.

  Can Flash with built-in error correction support the latest Flash technology without more complex 4-bit or 8-bit ECC? By Eugen Pfumfel, Principal Engineer, Memory Marketing, Toshiba Electronics Europe.

Doubling CPU operating frequency from 120 to 240MHz, Renesas has extended its RX Family of 32-bit MCUs with the RX71M Group. Developed for use in industrial equipment and described by Renesas as the ‘flagship’ product of the series, the group is available with up to 4MB of on-chip flash memory.

Flash is quickly becoming an integral part of daily operations at large data centres. As customers seek to address the 'mismatch' between increasing processor speeds and storage based on mechanically-driven HDDs, they are turning to flash, valuing the speed and performance associated with it. By Chris Gale, European Marketing Director, SanDisk.

Solid State Supplies is now stocking legacy memory products from Taiwan-based manufacturer AMIC Technology that have been developed in the company’s new 90nm multi-voltage process. The implementation of this advanced process technology across the entire range will enable the long-term availability of both 5.0V and 3.0V memory devices.

Featuring power consumption claimed to be 60% lower than traditional devices, a family of wide-voltage, ultra-low-power NOR Flash memory products has been introduced by Macronix. The MX25R devices operate from a 1.7-3.6V range in ultra-small packages, making them suitable for wearable devices.

Offering 4 and 8Mb of memory respectively, Microchip's SST26WF040B and SST26WF080B devices have been announced, extending the company's 1.8V Serial Quad I/O (SQI) SuperFlash Memory range. These devices are manufactured with Microchip’s high-performance SuperFlash technology, providing superfast erase times and high reliability.

The use of Flash memory is ubiquitous, but the introduction of multi-level cell technology could make it even more prolific. By Ethan Chen & Precyan Lee, Advantech.

Equipped with the company's 19nm 2nd gen NAND flash memory, Toshiba Electronics Europe has announced a series of Solid State Hybrid Drives (SSHDs). The MQ02ABD100H provides a 1TB capacity in a 9.5mm high form factor, while the MQ02ABF050H offers a capacity of 500GB in a drive 9.5mm high.