Memory

Serial EEPROMs, which operate at temperatures of up to 105°C, have been introduced by STMicroelectronics. The EEPROMs are claimed to deliver the industry’s most complete selection of densities, bus interfaces and packages, giving designers extra flexibility to upgrade data and parameter storage without making PCB design changes.

Toshiba has announced the development of the world’s first 48-layer 3D stacked cell structure flash memory, called BiCS, a 2-bit-per-cell 128Gb (16GB) device. The BiCS is based on a leading-edge 48-layer stacking process, which enhances the reliability of write / erase endurance and boosts write speed, and is suited for use in diverse applications, primarily SSD.

Compliant with JEDEC e•MMC Version 5.1 (released in February 2015), Toshiba Electronics Europe has announced embedded NAND flash memory products supporting 'command queueing' and 'secure write protection' features. The devices are designed for use in a wide range of digital consumer products, including smartphones, tablets and wearable devices.

With data security threats increasing, Microsemi has introduced its 2nd gen highly secure 64GB SSD, specifically designed for market applications where data protection is of the utmost importance. It overcomes malicious attack concerns with Microsemi’s factory firmware lockdown technology preventing covert firmware repurposing. Offered in a 32x28mm BGA package, the SSD is optimised for embedded computers in harsh environments.

DRAM technology is well known and components are fully standardised products, which are manufactured with low cost materials and assembly lines. So why are there differences in quality and price anyway? By Ulrich Brandt, Head of Business Unit DRAM Products at Swissbit AG.

The new ultra-low power MX25R family of Serial NOR Flash devices from Macronix are on sale at distributor Ineltek UK. Targeting wearables and long battery-life applications, the devices offer standard features designers have come to expect in Serial Flash, with many added benefits including deep standby currents measured in nanoamps.

Offering a significantly decreased package footprint size, e2v has announced the release of a stacked-package 32Mb MRAM-based product, the highest density MRAM device in the industry. The EV5A16B is a stacked solution, featuring two 16Mb MRAM devices from Everspin Technologies, and is offered in a 54-pin stacked-package TSOP.

  A family of SQI (Serial Quad I/O) interface SuperFlash memory devices has been introduced by Microchip. The SST26VF family is comprised of a 16Mb model, a 32Mb model and a 64Mb model, all of which have been manufactured using Microchip’s CMOS SuperFlash technology.

As a finale to the Mobile World Congress in Barcelona, SanDisk introduced the company’s first high endurance microSDXC memory card built to withstand up to 10,000 hours of Full HD Video1 recording.  The new technology has proven itself to enable the company to reach a new milestone -- a 64GB2 microSDXC card that allows consumers to write and rewrite up to 10,000 hours of Full HD recording.

Magnetic vortex structures, so-called skyrmions, could in future store and process information very efficiently. They could also be the basis for high-frequency components. For the first time, a team of physicists succeeded in characterising the electromagnetic properties of insulating, semiconducting and conducting skyrmion-materials and developed a unified theoretical description of their behaviour, thus laying the foundation for future electro...