Memory
Flash memory embedded process based on 65nm logic process
A flash memory embedded process based on 65nm logic process that uses less power than current mainstream technology has been announced by Toshiba. It has also announced a single-poly Non-Volatile Memory (NVM) process based on 130nm logic and analogue power process. Applying the optimal process to diverse applications will allow Toshiba to expand its product line-up in such areas as MCUs, wireless communication ICs, motor controller drivers and po...
FPGA-based reference design doubles NAND Flash life
Based on the company's Arria 10 SoCs, a storage reference design that doubles the life of NAND flash has been introduced by Altera. It can also increase the number of programme-erase cycles by up to seven times compared to current NAND flash implementations.
EEPROM addition allows temperature IC to stand alone
Linear introduces the LTC2984, a high performance digital temperature measurement IC that directly digitises RTDs, thermocouples, thermistors and external diodes with 0.1°C conformity and 0.001°C resolution. The LTC2984 builds on Linear’s LTC2983 by adding Electrically Erasable Programmable Read-Only Memory (EEPROM) that stores user configuration data and custom sensor coefficients.
mSATA SSDs provide read/write speeds of 525 & 450MB/s
Swissbit has launched its next-gen X-60m Series mSATA SSD product family. Compliant with the latest SATA III (6.0 Gb/s) interface specification, these reliable drives deliver high performance in demanding industrial, network, comms and automotive sectors. X-60m drives are compliant with JEDEC MO-300A (50.8x29.85x3.5mm) and suited for embedded applications needing high performance, non-volatile SSD storage in a compact, removable form-factor.
High speed CMOS DDR2 SDRAM features high 2Gb density
Alliance Memory has broadened its lineup of high-speed CMOS DDR2 SDRAMs with a device featuring high 2Gb density in the 84-ball 8x12.5x1.2mm FBGA package. Available from a very limited number of suppliers, the AS4C128M16D2 is offered in commercial (0 to +85°C) and industrial (-40 to +95°C) temperature ranges.
Ideas are bubbling for more efficient computer memory
Researchers at UCLA and the U.S. Department of Energy’s Argonne National Laboratory have announced a new method for creating magnetic skyrmion bubbles at room temperature. The bubbles, a physics phenomenon thought to be an option for more energy-efficient and compact electronics, can be created with easy-to-use equipment and common materials.
SPI NOR flash memories meet AEC-Q100 certification
A new series of AEC-Q100-certified SPI (Serial Peripheral Interface) multiple-I/O NOR Flash memory ICs from AMIC Technology is available at Solid State Supplies. Specified for operation over the –40 to +125°C temperature range, the addition of AEC-Q100 certification for the AMIC A25L series of 3V SPI NOR Flash devices makes them ideal for automotive and other industrial applications.
Workshop looks at innovative memory technologies
CEA-Leti is hosting its seventh workshop on innovative memory technologies, following the 17th annual LetiDays Grenoble on the 24th and 25th of June at the Minatec campus. Topics at LetiWorkshop Memory on the 26th of June will range from short-term to long-term memory solutions.
8Gb-based DDR4 memory modules offer cost advantages
DDR4 2400MT/s 8Gb-based RDIMM, LRDIMM, and ECC UDIMM server modules are now being sampled by Crucial through its Technology Enablement Program. Engineered to enable higher density modules, 8Gb-based DDR4 memory allows for increased performance, bandwidth, and energy efficiency.
8Gb components enable DDR4 16GB memory modules
Designed for those who deal with content creation, virtual machines, RAM drives, and memory-intensive applications, the Ballistix DDR4 16GB performance memory modules have been released by Crucial. The devices leverage Micron’s 8Gb DDR4 component technology to offer up the highest density DDR4 memory to date.