Memory

Micron Technology and TE Connectivity today announce the availability of a Single-Sided SODIMM and a low-profile single-sided, double data rate 3 SODIMM connector solution to take advantage of the burgeoning market for Ultrabook devices, convertibles, tablets and other thin and light devices.

Toshiba has revealed today that it has developed NANO FLASH-100 much faster access for embedded microcontrollers, based on Toshiba's original NANO FLASH. Toshiba will follow up on its first NANO FLASH-100 product, TMPM440F10XBG, with additional ARM core-based products and will continue the proactive development of flash memory technologies for embedded microcontrollers.

Microchip has announced an expansion of its SPI Flash memory portfolio, with the introduction of the SST25PF020B, SST25PF040B and SST25PF080B devices. The SST25PF020B, SST25PF040B and SST25PF080B offer 2-, 4- and 8-Mbit of memory and are manufactured with Microchip’s high-performance SuperFlash technology, a split-gate, NOR Flash design with thick-oxide tunneling injector for superior quality and reliability.

Integrated Device Technology today announced the availability of the industry’s first complete chipset for DDR4 load reduced dual inline memory modules, including both a registered clock driver and data buffer devices. With DDR4 data rates climbing to 3.2 Gb/s and higher, the clear advantages afforded by LRDIMM as a speed-scalable memory technology are expected to drive adoption across a broad array of memory-intensive computing and storage app...

Virtium today announced that the company’s ECC SODIMM memory modules are proven for use on high-volume MicroServers. Intel has validated Virtium’s ECC SODIMM modules on its Bordenville MicroServer platform, which paves the way for more mainstream applications to realize the advantages of ECC on a smaller form factor module.

Crucial today announced its first DDR4 DRAM demonstration at CES 2013. As a global brand of Micron, the Crucial DDR4 DRAM demonstration is based on Micron's 30-nanometer technology, the 4-gigabit DDR4 x8 part is the first piece of what is expected to be the industry's most complete portfolio of DDR4-based modules, which will include RDIMMs, LRDIMMs, SODIMMs and UDIMMs (standard and ECC).

Cypress Semiconductor today announced that it has integrated Ramtron International’s ferroelectric random access memory products into its portfolio, offering the market’s widest range of densities for fast-write nonvolatile memories. F-RAM is the industry’s lowest-power nonvolatile memory, complementing Cypress’s nonvolatile static random access memories, which are the world’s fastest.

Micron Technology announce the addition of a new product to its Phase Change Memory portfolio. With high-volume shipments of its 45-nanometer, 1-gigabit PCM-based multichip package solution for mobile devices well underway, the company is now sampling a 512-megabit PCM plus 512Mb LPDDR2 MCP that offers greater flexibility in terms of application requirements.

Kilopass Technology have today announced that its NVM IP is the first antifuse technology to achieve successful test chips on TSMC’s 20nm process. Analysis of the test chips containing Kilopass NVM IP memory modules validated manufacturability, process control tolerance and cell programming characteristics.

Fujitsu Semiconductor America today introduced an ultra-low-power Ferroelectric Random Access Memory in a new, smaller standard SON-8 package designed for miniaturized products. The 16Kbit FRAM MB85RC16 includes an I2C interface and features the smallest standby and operating current in its class of products.