Memory

Rochester Electronics has re-introduced and continues to manufacture the AMD Am27C512 – 512 kilobit CMOS EPROM. It’s organized as 64K words by 8 bits per word, operates from a single +5 V supply and can typically access data in less than 55 ns. The CMOS process technology provides for high speed, low power and high noise immunity.

Rochester Electronics has re-introduced and continues to manufacture the AMD Am27C010 – 1 megabit CMOS EPROM. It’s organized as 128K words by 8 bits per word, operates from a single +5 V supply and can typically access data in less than 45 ns, allowing high performance microprocessors to operate without any WAIT states.

Alliance Memory today introduced a new high-speed CMOS synchronous DRAM (SDRAM) with a low density of 16 Mb in a 50-pin, 400-mil plastic TSOP II package. The AS4C1M16S offers a fast access time from clock of 5.4 ns at a 7-ns clock cycle, and a fast clock rate of 143 MHz.

A new e-book from ASSET InterTech, Cache-as-RAM for board bring-up of non-booting circuit boards, takes a close look at how run-control tools can employ a processor’s on-chip cache memory instead of on-board RAM memory to boot non-booting prototype circuit boards.

PMC today announced further expansion of its Adaptec storage product line with the industry’s first high performance, high density, low profile encrypted PCIe Gen3 host bus adapter (HBA) family. This product line is capable of executing over one million input/output operations per second with 6.6 GB/sec sustained throughput, provides 256 bit AES encryption, and offers up to 16 ports.

Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 4M IC (512K x 8). Operating from a single power supply of 2.7 V to 3.6 V and offering a fast access time of 55 ns in a wide variety of package options, the AS6C4008A is optimized for low-power industrial, telecom, medical, automotive, and networking applications and is particularly well-suited for battery backup nonvolatile memory.

Micron Technology has today announced the launch of the industry's smallest 128-gigabit NAND flash memory device utilizing its award-winning 20-nanometer process technology. The new 128Gb device stores three bits of information per cell, called triple-level-cell, creating a highly compact storage solution. Measuring 146mm2, the new 128Gb TLC device is more than 25 percent smaller than the same capacity of Micron's 20nm multi-level-cell NAND devic...

Toshiba have announced that it is now shipping of samples of its 64-gigabyte embedded NAND flash memory module equipped with a Universal Flash Storage interface. The first in the industry, the new module is fully compliant with the JEDEC UFS Ver.1.1 standard, and is designed for a wide range of digital consumer products - including smartphones and tablet PCs.

Invensas Corporation announced today that its new xFD DIMM-in-a-Package memory technology has been licensed to an original equipment manufacturer, and this technology will be demonstrated in Intel-based Ultrabooks at CES 2013.

Toshiba reveals that it has started sample shipments of a 64-gigabyte embedded NAND flash memory module, the first in the industry equipped with a UFS I/F. The module is fully compliant with the JEDEC UFS Ver.1.1 standard and is designed for application in a wide range of digital consumer products, including smartphones, tablet PCs.