Memory

3D PLUS introduces a new 32Mb PROM - 3DPO32M08VS1419 to its space grade PROM family, to follow the successful 64Mb PROM launched two years ago. The 3DPO32M08VS1419 is a highly integrated One-Time-Programmable Rom Memory designed to store configuration bitstreams for FPGA devices, such as Xilinx Virtex FPGAs.

ADATA Technology today announces the start of shipments of its latest advance in gaming technology, the XPG Gaming v2.0 Series DDR3 2600G DRAM 8GB modules. These dual channel kits are designed and engineered to bring gamers and enthusiasts optimum performance for their high-end systems.

Rochester Electronics has re-introduced and continues to manufacture the National Semiconductor MM54C89/MM74C89 64-Bit TRI-STATE Random Access Read/Write Memory. The four TRI-STATE data output lines working in conjunction with the memory enable input provide for easy memory expansion. For a continuous authorized source on this product series, check inventory here.

Alliance Memory today extended its 128M and 256M lines of high-speed CMOS synchronous DRAMs with new devices in a 54-ball 8 mm by 8 mm by 1.2 mm TFBGA package. These 8M x 16 and 16M x 16 SDRAMs feature fast access time from clock down to 4.5 ns at a 5-ns clock and clock rates of 143 MHz.

Rochester Electronics has re-introduced and continues to manufacture the AMD 27S21 1,024-Bit Bipolar Programmable Read-Only Memory. This highly reliable ultra-fast Schottky TTL PROM is available in a three-state (27S21) output version, which makes it compatible with a variety of micro-programmable controls. For a continuous authorized source on this product series, check inventory here.

Altis announced today the next generation of embedded CBRAM (eCBRAM) technology, a new platform available for demonstration in Q2 2013. The new technology features design and manufacturing improvements which deliver higher reliability and faster write speeds.

HOLTEK Semiconductor's new EEPROM device, the HT24LC256, with its 2-wire serial interface has a total capacity of 256K bits arranged in a 32768 x 8 bits structure. The device has a working voltage range from 2.2V to 5.5V and a maximum operating frequency of 400kHz.

Microsemi Corporation today announced its launch of high temperature flash memory products, tailored to meet the environmental demands of oil and gas industries' downhole drilling. The new high-temperature NOR flash products are designed for temperatures of 150°C and higher, and provide improved endurance benefits to systems designers.

Etron Technology introduces a new flash drive controller, EV2669, of Etron’s USB3.0 Flash Drive Accelerator (FDA) series, in addition to its EV1669 product recently announced at the 2013 Consumer Electronics Show (CES). EV2669 enables Etron’s USB3.0 flash drive customers to deliver unprecedented read and write speeds of 260 and 235 megabytes per second with MLC (Multiple Level Cell) flash memories without additional host drivers or so...

Fujitsu have today revealed the launch of two new FRAM products, MB85RS1MT and MB85RS2MT. Featuring 1 Mbit and 2 Mbit memory densities, respectively, these are the highest density SPI FRAM products currently offered by Fujitsu Semiconductor. The new products will be made available in sample quantities from the end of March 2013.