Memory

The D68HC11 is fully software compatible with Motorola’s HC11. DCD's IP Core offers legacy architecture cycle compatible with original microcontrollers, like 68HC11E, 68HC11A, 68HC11D, 68HC11F1, MC68HC11K0 MC68HC(L)11K1, MC68HC(L)11K4, MC68HC11KS2, MC68HC711K4, MC68HC711KS2, MC68HC11KW1.

Swissbit announces new members of its INDUSTRIAL family of DDR3 SODIMMs compatible with the JEDEC DDR3L standard running at 1.35V. DDR3L will allow an up to 15% reduction in power consumption over DDR3.

In practice, the real lifetime of flash memory is dependent on a large number of parameters which are often not even mentioned in the data sheets from the manufacturers. This means that in real­life situations the flash memory used in your applications can fail earlier than expected. This risk can be minimised with lifetime tests carried out with the “altec SSD Life Test Tool”

Toshiba has announced full European availability of its latest Enterprise-class PX02SMx SSDs and MG03xxxx HDDs. These storage devices are ideal for a wide range of business-critical server and storage platforms as well as private cloud storage infrastructures.

Toshiba Corporation has announced that the company has developed second generation 19 nanometre process technology that it will apply to mass production of 2-bit-per-cell 64 gigabit NAND memory chips later this month. Toshiba has used the new generation technology to develop the world’s smallest 2-bit–per-cell 64 gigabit NAND memory chips, with an area of only 94 square millimetres.

Imec and GLOBALFOUNDRIES announced today that they have expanded joint development efforts to advance STT-MRAM (spin-transfer torque magnetoresistive random access memory) technology. The first IC manufacturer to join imec’s R&D program on emerging memory technologies, GLOBALFOUNDRIES completes the value chain of imec’s research platform, which fuels industry collaboration from technology up to the system level.

What are the embedded memory options when your application is high rel? Vanessa Knivett investigates in this article from ES Design magazine.

Rochester Electronics has re-introduced and continues to manufacture the Intel M28F008 8 MBIT (1 MBIT x 8) Flash Memory. This high-density nonvolatile read/write solution for solid-state storage features extended cycling, symmetrically blocked architecture, fast access time, write automation and low power consumption. The M28F008 offers a cost-effective and reliable alternative to SRAM and battery.

Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 32M IC (2M x 16 / 4M x 8 switchable), the company's highest density low-power device to date. Operating from a single power supply of 2.7 V to 3.6 V and offering a fast access time of 55 ns, the AS6C3216 is optimized for low-power industrial, telecom, medical, and automotive applications, and it is particularly well-suited for battery backup non-volatile memory.

3D PLUS today introduced the first space grade 72b wide DDR2 3D2D4G72UB3478. The 3D2D4G72UB3478 is a high-speed highly integrated DDR2 Synchronous Dynamic Ram Memory. It is organized as 64M x72b.