Memory

Altera Corporation and Micron Technology today announced they have jointly demonstrated successful interoperability between Altera Stratix V FPGAs and Micron’s Hybrid Memory Cube. This technology achievement enables system designers to evaluate today the benefits of HMC with FPGAs and SoCs for next-generation communications and high-performance computing designs. The demonstration provides an early proof point that production support of HMC...

Toshiba has today announced its next-generation FlashAir wireless LAN SD cards, offering increased capacity and enhanced wireless functionality. The latest 16GB FlashAir offers double card capacity, enables easy and flexible sharing of photos, and operates at speeds that reduce data transfer time by 30 per cent.

Integrating solid state memory in to enterprise system architectures offers benefits in meeting demand for greater storage but comes with challenges. Can flash technology be the answer? Thomas Pavel, Director of Channel Sales at LSI, explores further in this article from ES Design magazine.

Samsung has announced today that it is mass producing the world's fastest embedded memory – the industry's first eMMC 5.0 devices – in 16GB, 32GB and 64GB densities for next-generation smartphones and tablets. Featuring an interface speed of 400MB/s, the lightning-fast eMMC PRO memory provides exceptionally fast application booting and loading.

Samsung announce the industry's first mass production of three gigabyte low power double data rate 3 mobile DRAM, the highest density mobile memory solution for next-generation smartphones, which will bring a generation shift to the market from the 2GB packages that are widely used in current mobile devices.

Samsung has announced the industry's first 45 nanometre embedded flash logic process development. Samsung successfully implemented the new process into the smart card test chip, which means that this process technology fulfils the stringent quality requirements of the security solution market and can be successfully deployed on a commercial scale.

Samsung Electronics announce the industry's first production of ultra-high-speed four gigabit low power double data rate 3 mobile DRAM, which is being produced at a 20 nanometer class process node. The new 4Gb LPDDR3 mobile DRAM enables performance levels comparable to the standard DRAM utilized in personal computers, making it an attractive solution for demanding multimedia-intensive features on next-generation mobile devices such as high-perfor...

STMicroelectronics has announced the M24C32-RMN6TP and M95320-DRMN3TP/K EEPROMs. The new EEPROMs guarantee endurance of up to 4 million erase/write cycles, four times more than the 1 million cycles offered by competing devices. This gives design engineers greater freedom to update stored data more frequently and extend system lifetime, even at high temperatures.

Micron Technology is sampling next-generation, 16-nanometer process technology, enabling the industry's smallest 128-gigabit multi-level cell NAND Flash memory devices. The 16nm node is not only the leading Flash process, but it is also the most advanced processing node for any sampling semiconductor device. It solidifies Micron's leadership position in storage technology development and delivers on the company's vision to provide the most advanc...

Rochester Electronics is officially licensed by AMD to continue manufacturing the AM27C512 product family through Rochester’s’ extensive line-up of Extension-of-Life® solutions, which supports customer requirements following the end-of-life (EOL) notification.