RF Micro Devices, Inc. today announced it has shipped over one billion cellular power amplifiers (PAs) to handset manufacturers headquartered in the Greater China area. This significant industry milestone demonstrates RFMD's ongoing commitment to providing China-based customers with operational scale, technological innovation and an industry-leading cost structure.

RFMD’s new RF5540 is designed specifically for high-performance WiFi applications in the 5GHz ISM band. This module integrates the LNA with bypass mode and an SPDT switch in a front end solution. The integrated 50Ω input and output match minimizes the number of external components required – optimizing the size and cost of the solution. The RF5540 is packaged in a 2mm x 2mm x 0.5mm, 12-pin QFN.

RF Micro Devices, Inc. today announced the expansion of its broad product portfolio to include new 3G/4G antenna control solutions. The high-performance antenna control solutions are optimized to solve the complex RF requirements of 3G/4G smartphones related to high band count and signal integrity in an extremely compact form factor.

RF Micro Devices, Inc. today announced it has been selected to support multiple next-generation devices for a leading manufacturer of 3G/4G smartphones. The next-generation devices include a highly anticipated LTE smartphone that will feature multiple variants of RFMD’s family of ultra-high efficiency WCDMA and 4G LTE power amplifiers.

RFMD’s new RF6559 is a Front End Module (FEM) for 915MHz AMR systems. It contains an integrated three-stage PA with 42dB of gain and typical power output of 28dBm. The RF6559 allows for Tx/Rx on a single antenna via 2 integrated SPDT switches. Tx filtering, built-in Power Detector, and a two-stage LNA with typical gain of 32dB are also included, packaged in a 28-pin, 6mmx6mm laminate package with backside ground.

RF Micro Devices, Inc. announced today it has secured a reference design win for its second-generation ultra-high efficiency family of power amplifiers. The new reference design win is on a highly integrated multimode multi-band 3G/LTE solution.

RF Micro Devices, Inc. today announced the expansion of the Company’s family of PowerSmart power platforms to include multiple new 3G and 4G LTE PowerSmart product variants. RFMD’s PowerSmart power platforms are at the forefront of the technology shift to converged front ends in multimode, multi-band applications, including smartphones, tablets, and other data-centric mobile broadband devices.

RF Micro Devices, Inc. today announced it continues to achieve performance milestones related to the advancement of RF power management. RF Micro Devices is developing average power tracking- (APT-) and envelope tracking- (ET-) based solutions that leverage RFMD’s leadership in power amplifiers, RF power management and compound semiconductors to deliver breakthrough capabilities.

RF Micro Devices, Inc. today responded to the filing of a patent infringement lawsuit by Peregrine Semiconductor Corporation relating to radio frequency integrated circuits (RFICs) and switching technology.

RFMD’s new RF5652 High Power Amplifier addresses IEEE 802.11b/g/n WiFi (2.4GHz to 2.5GHz) for customer premises equipment (CPE) applications. It further supports IEEE 802.16e WiMAX (2.5GHz to 2.7GHz) CPE applications. It integrates a three-stage Linear Power Amplifier with 30dBm (1W) linear power at PA output, along with power detection, in a 5mmx5mm QFN package.

RFMD’s new RF3235 and RF3237, paired with one or more discrete 3G power amplifiers such as RF722x or RF724x, enable best-in-class performance at the lowest total solution cost for 3G entry platforms. RF3235 and 3237 are quad-band GSM/GPRS Class 12-compliant transmit modules. They include four (RF3237) to six (RF3235) UMTS transmit/receive ports that also serve as GSM Rx ports and are pin-to-pin compatible.

RFMD’s new RF6504 is a Front End Module (FEM) for 433MHz to 470MHz AMI/AMR systems. The Tx port provides a PA with nominal output power of 30dBm and gain of 15dB. The Rx passthrough port is on a separate path. Both are combined with a single antenna port and SP2T switch, all presented in a 5.5mm x 5.0mm, 28-pin package.

RFMD’s new RF6514 is a Front End Module (FEM) for 470MHz to 510MHz AMR systems. It contains separate ports for Rx and Tx paths. The PA produces nominal output power of 30dBm. This FEM is presented in a 5.5mm x 5.0mm, 28-pin package.

RF Micro Devices, Inc. today announced the release of the RFFM6201, a 2.4GHz band single-chip Zigbee front-end module (FEM) featuring an integrated power amplifier, low noise amplifier, and diversity switch. RFMD’s 2.4GHz RFFM6201 delivers industry-leading current consumption (170mA at rated power) and high-power performance (+23dBm) for Home Area Networking (HAN)/Smart Energy applications.

RFMD’s new RF3928B is a 65V 380W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance, and general purpose broadband amplifier applications. The RF3928B is a matched GaN transistor in a hermetic, flanged ceramic package. This package provides thermal stability through the use of advanced heat sink and power dissipation technologies.

RFMD’s new RFSA3013 and RFSA3023 are fully monolithic analog voltage-controlled attenuators (VCAs) featuring exceptional linearity over a 30dB minimum gain control range. These VCAs also feature internal temperature compensation that provides an attenuation profile highly insensitive to temperature changes.

The RF5605 and RFFM420x family of parts (RFFM4200, RFFM4201, RFFM4202, and RFFM4203) from RFMD are 6 x 6mm high power, front end modules specifically designed for IEEE 802.11b/g/n WiFi 2.4 -2.5GHz customer premises equipment (CPE) applications.

RF Micro Devices, Inc. today announced it has commenced volume production of multiple 3G/4G power amplifiers (PAs), in support of two leading smartphone families. The two most recent smartphones supported by RFMD® feature RFMD’s PowerSmart™ power platform and RFMD’s RF724x family of ultra-high efficiency power amplifiers.

RFMD’s new RF1293 and RF1293A Switch Filter Modules offer very low insertion loss along with excellent linearity performance and are ideal for multi-mode GSM, EDGE, LTE, and UMTS handset applications. These modules integrate low pass filtering on the GSM transmit paths, avoiding the need for external harmonic attenuation.

RFMD's portfolio of single-chip integrated front end modules (FEMs) are developed for high-performance ZigBee Home Area Network(HAN) / Smart Energy applications in the 2.4 GHz to 2.5 GHz ISM band. The RF6525, RF6515, and RF6535 are specifically designed to operate with the Ember EM300 Series System-on-Chips (SoCs) - EM351 and EM357, EM250 SoC, and EM260 co-processor. The FEMs address the need for aggressive size reduction in an IEEE 802.15.4 fron...