RF Micro Devices, Inc. today announced the release of the RFVA0016 – a highly integrated one-quarter watt (¼W) analog-controlled variable gain amplifier. RFMD’s broadband RFVA0016 VGA features external matching to allow operation in all RF bands between 400 to 2700MHz with a single module.

RF Micro Devices, Inc. today announced the introduction of three new power amplifiers for high-frequency point-to-point radio applications. RFMD’s RFPA1002, RFPA1003, and RFPA1702 deliver >1W RF output power in the 10GHz to 20GHz frequency bands and expand the Company’s portfolio of radio chipsets targeting cellular backhaul and other markets.

RF Micro Devices, Inc. today announced the release of four high-performance front end modules (FEMs) for next generation WiFi applications. The RFMD® RFFM8200, RFFM8500, RFFM8202, and RFFM8502 are highly integrated FEM solutions covering multiple WiFi standards and frequency bands, particularly IEEE802.11n and the emerging 802.11ac specification.

RF Micro Devices, Inc. announced today that its Foundry Services business unit has updated its process design kits (PDKs) for use with Agilent Technologies’ recently released Advanced Design System (ADS) 2011 EDA software.

RF Micro Devices, Inc. today announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.

RFMD’s new RFVA0016 is an integrated, analog-controlled, Variable Gain Amplifier for broadband applications with external matching, allowing operation in all bands from 400MHz to 2700MHz with a single module. It features exceptional linearity, OIP3 > 40dBm, and provides a >30dB gain control range. A mode logic pin enables the VGA to be selected for either a 0V to +3V or a +3V to 0V analog-controlled attenuation slope.

RFMD’s new RFPA1012 GaAs HBT linear Power Amplifier is specifically designed for wireless infrastructure applications. Using a GaAs HBT fabrication process, this high performance single-stage amplifier achieves a high IP3/DC power ratio that operates over a broad frequency range.

RFMD’s new RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.

The RF65x9 series of Transmit/Receive Modules integrate a complete solution in a single Front-End Module for AMI/AMR and Smart Grid solutions. The FEMs integrate a PA, transmit filtering, input and output switches, a Tx or receive attenuation path, and an LNA with bypass mode.

RFMD’s new RFSW6131 is a GaAs pHEMT Single-Pole Three-Throw switch designed for use in Cellular, 3G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability, while also 3V and 5V positive logic compatible.

RFMD’s new RFFM7600 FEM for 2.5GHz to 2.7GHz LTE/WiMAX contains a Power Amplifier with Tx harmonic filtering and Tx/Rx switching. RFFM7600 is provided in a 6mm x 6mm laminate package, incorporating surface mounted devices for filtering and matching.

Four new MMIC Upconverter and Downconverter devices from RFMD offer high performance and low cost for high frequency applications. The RFUV1702 and RFUV1703 Upconverters incorporate an integrated frequency multiplier (x2), LO buffer amplifier, a balanced single sideband (image rejection) mixer followed by variable gain amplifier, and DC-decoupling capacitors.

RF Micro Devices, Inc. today announced the extension of RFMD’s industry-leading GaN process technology portfolio to include a new technology optimized for high voltage power devices in power conversion applications. RFMD’s newest GaN process technology – rGaN-HV -- enables substantial system cost and energy savings in power conversion applications ranging from 1 to 50 KW.

RFMD’s new Multi-Path Antenna Switch Modules offer very low insertion loss with excellent linearity performance. Each is ideal for multi-mode GSM, EDGE, UMTS, and LTE handset applications. These modules integrate low pass filtering on the GSM transmit paths, thus avoiding the need for external harmonic attenuation. They are compatible with +1.8V control logic and are packaged in compact module packages allowing for a small solution size with no...

RF Micro Devices, Inc today announced it has been granted ISO/TS 16949 certification. The ISO/TS 16949 certificate is the highest international quality standard for the automotive industry, and ISO/TS 16949 certification demonstrates RFMD’s commitment to excellence in product design and manufacturing processes for automotive applications.

Four new MMIC Upconverter and Downconverter devices from RFMD offer high performance and low cost for high frequency applications. The RFUV1002 and RFUV1003 Upconverters incorporate an image rejection mixer, LO buffer amplifier, variable gain amplifier, and DC-decoupling capacitor. The RFRX1001 and RFRX1002 Downconverters incorporate an image rejection mixer, LO buffer amplifier, integrated LNA, and DC-decoupling capacitor.

RFMD’s new RFCA3302 is a high performance InGaP HBT MMIC amplifier designed to run from a single +5V supply without the need for an external dropping resistor. The high gain, high linearity, and low distortion from 40MHz to 1008MHz make this part ideal for broadband cable applications. An integrated bias circuit provides stable gain over temperature and process variations. It is offered in a small SOT-89 package and is RoHS compliant.

RFMD’s new GaAs InGaP RFVC183x and RFVC184x series MMIC VCOs offer low phase noise and include integrated frequency dividers for Fo/2 and Fo/4 output frequency, as well as integrated RF output buffer amplifiers. VCOs in this family offer narrowband operation ranges within the 7GHz to 15GHz band. They operate from a single positive supply voltage and deliver low phase noise performance with minimum power consumption. Each comes in a compact RoHS...

RF Micro Devices, Inc. today announced LG has selected RFMD to supply multiple components in support of the LG Optimus 4X HD and the Optimus 3D Max smartphones. LG’s Optimus 4X HD and Optimus 3D Max are expected to be available globally in 2012.

RFMD’s new RF3688 is a single-chip dual-band front end module (FEM) for high performance WiFi applications in the 2.5GHz and 5GHz ISM bands. It contains integrated PAs for 2.5GHz and 5GHz, Tx/Rx switch for each band, baluns for both low and high receive bands, bypass capacitors, built-in power detector for both bands, and filtering for transmit paths. The RF3688 is packaged in a 24-pin, 4mmx4mm QFN package with backside ground.