RF Micro Devices, Inc. has announced it has commenced volume production of multiple 3G/4G power amplifiers (PAs), in support of two leading smartphone families. The two most recent smartphones supported by RFMD® feature RFMD's PowerSmart™ power platform and RFMD's RF724x family of ultra-high efficiency power amplifiers.

RFMD’s new RFFM3482E Front End Module (FEM) is a single-chip integrated FEM for high-performance WiFi applications in the 2.4GHz to 2.5GHz ISM band. It addresses the need for aggressive size reduction for typical 802.11b/g/n front end designs and greatly reduces the number of components outside of the core chipset.

RFMD’s new RF1604D is a broadband single-pole four-throw (SP4T) switch designed for Receive Diversity switching applications. The RF1604D is ideally suited for battery-operated applications requiring high performance switching with very low DC power consumption. It features very low insertion loss and is optimized for diversity routing with 1.3V GPIO control voltage compatibility.

RF Micro Devices, Inc. has announced the introduction of a new product family of high performance differential amplifiers for cable television (CATV) networks. The broadband CATV products leverage RFMD's product and technology leadership to deliver enhanced functionality and improved performance to CATV access networks worldwide.

RFMD’s new RF6555 integrates a complete solution in a single Front End Module (FEM) for ZigBee® and Wi-Fi applications in the 2.4GHz to 2.5GHz band. This FEM integrates the PA plus harmonic filter in the transmit path and an internally integrated LNA with bypass mode. The RF6555 provides a single balanced TDD access for Rx and Tx paths along with two ports on the output for connecting a diversity solution or a test port. The RF6555 also has cu...

The RFCM2680 is the industry’s first surface mount GaN power doubler module aimed at CATV networks. Employing a combination of GaN HEMT and GaAs pHEMT technologies, the device provides high output capability from 45-1003MHz with excellent distortion performance.

RF Micro Devices has announced that Huawei Technologies has honored RFMD with Huawei’s 2011 “Best Supplier Award.” The prestigious award was accepted by RFMD’s president and CEO, Bob Bruggeworth, at an awards ceremony held earlier today in Shenzhen, China. Mr. Bruggeworth commented following the ceremony, “It is a distinct honor to receive this award from Huawei in recognition of RFMD’s commitment to excellence in on-time product deli...

RFMD’s new RFPP2870 SOT115J push-pull amplifier features 28dB minimum gain at 1003MHz, with excellent distortion characteristics and optimal reliability. The part employs GaN HEMT, GaAs MESFET, and GaAs pHEMT die and operates from 40MHz to 1003MHz.

The RF6650 is a pulse-width modulated, voltage-mode controlled DC-DC converter unit designed to supply power to W-CDMA power amplifiers. The output voltage is continuously programmable through the VSET analog input pin.

RFMD’s RFHA1000 GaN Power IC (PIC) is a wideband power amplifier designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves high efficiency, flat gain and power over a large instantaneous bandwidt...

The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance (ATCS), and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package.

RFMD’s RFHA1003 GaN Power IC (PIC) is a wideband power amplifier designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves high efficiency, flat gain and power over a large instantaneous bandwidt...

RFMD’s new RF3826 is a wideband Power Amplifier designed for continuous wave and pulsed applications such as wireless infrastructure, RADAR, two-way radios, and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.

The RF1602 is a single-pole dual-throw (SPDT) switch designed for switching applications requiring very low insertion loss, high isolation, and high power handling capability coupled with minimal DC power consumption. The performance of RF1602 has been optimized for cellular applications demanding stringent linearity requirements.

RF Micro Devices, Inc. today announced a strategic initiative to extend RFMD’s industry leadership in compound semiconductor technologies into a broad array of adjacent non-RF growth markets. The strategic initiative includes the formation of a new business group, the Compound Semiconductor Group (CSG), which will operate alongside RFMD’s Cellular Products Group (CPG) and RFMD’s Multi-Market Products Group (MPG). RFMD forecasts the total av...

The RF1602 is a single-pole dual-throw (SPDT) switch designed for switching applications requiring very low insertion loss, high isolation, and high power handling capability coupled with minimal DC power consumption. The performance of RF1602 has been optimized for cellular applications demanding stringent linearity requirements.

RFMD’s high-power GaN broadband power transistors (BPTs) are optimized for commercial infrastructure, military communications, and general purpose amplifier applications in the 700MHz to 2.2GHz frequency band. They are ideal for constant envelope, pulsed, WCDMA, and LTE applications.

RF Micro Devices, Inc. rang the NASDAQ Stock Market Opening Bell on Thursday, August 18, 2011. The event celebrates RFMD's 20th anniversary and is in recognition of RFMD's 20 years of product and technology leadership in the radio frequency (RF) industry.

RF Micro Devices, Inc. , a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced its Foundry Services business unit has expanded its portfolio of process technologies to include two additional GaAs process technologies – RFMD’s FD25 low noise pHEMT process and RFMD’s FET1H switching pHEMT process. The two additional GaAs pHEMT process technologies ...

RF Micro Devices, Inc. has announced its Foundry Services business unit has expanded its portfolio of process technologies to include two additional GaAs process technologies — RFMD's FD25 low noise pHEMT process and RFMD's FET1H switching pHEMT process. The two additional GaAs pHEMT process technologies are available immediately to foundry customers.