The parts in RFMD’s new RF73xx series of high-power, high-efficiency linear power amplifiers are designed for use as the final amplification stage in 3V, 50Ω LTE mobile cellular equipment developed for E-UTRAN\LTE band operation. These parts are developed for 5MHz to 20MHz LTE channel bandwidths.

RF Micro Devices announced today a definitive agreement to acquire Amalfi Semiconductor for the rapidly growing entry-level smartphone market. RFMD intends to significantly accelerate the market adoption of Amalfi's RF CMOS and mixed-signal ICs by combining Amalfi's targeted product portfolio and proprietary RF CMOS and mixed-signal expertise with RFMD's deep customer relationships, broad product portfolio, extensive in-house manufacturing scale,...

In our Stand A4.134 at Electronica 2012, RFMD will showcase its industry-leading RF and microwave product portfolio for WiFi and Smart Energy, Wireless Infrastructure, GaN RF Power, Microwave MMIC solutions, Broadband Transmission, and Cellular Handsets.

RF Micro Devices today announced it has been awarded a $2.1 million contract from the Defense Advanced Research Projects Agency to enhance the thermal efficiency of gallium nitride (GaN) circuits used in high power radar and other military systems.

RF Micro Devices has today announced the release of two new CATV control components, in conjunction with the SCTE Cable-TEC Expo, in Orlando, FL. The new components include the RFSA2654, a 75-ohm broadband digital step attenuator, and the RFSW1012, a high power handling single-pole, double-throw switch.

RF Micro Devices is pleased to announce that Peregrine Semiconductor has filed a motion to voluntarily withdraw the lawsuit it filed against RFMD in the U.S. International Trade Commission in February 2012.

RF Micro Devices have today introduced multiple leading-edge GaN-based CATV amplifiers, in conjunction with the SCTE Cable-TEC Expo in Orlando, FL. The new CATV amplifiers include the RFPD2940 – a best-in-class, high-power GaN-based CATV power-doubler amplifier, as well as a new family of GaN-based push-pull CATV amplifiers, led by the RFPP2870 and RFCM3080.

RFMD’s new RFFM6901 is a single-chip front end module for applications in the 868/915MHz ISM Band. The RFFM6901 addresses the need for aggressive size reduction for typical portable equipment RF front end design and greatly reduces the number of components outside of the core chipset, thus minimizing the footprint and assembly cost of the overall solution.

RF Micro Devices announced today the Company will showcase its portfolio of industry-leading wired broadband components at the SCTE Cable-Tec Expo 2012, to be held October 17-19, 2012, in Orlando, Florida.

RFMD’s new high linearity WiFi front end modules provide complete integrated solution in a single front end module for WiFi systems. The ultra-small form factor and integrated matching minimizes layout area in the application and greatly reduces the number of external components.

RFMD’s new high linearity WiFi front end modules provide complete integrated front end solutions for WiFi systems. The ultra-small form factor and integrated matching minimizes layout area in the application and greatly reduces the number of external components.

RFMD’s new RFFM6904 is a single-chip front-end module for applications in the 868MHz/900MHz ISM Band. The RFFM6904 addresses the need for aggressive size reduction for typical portable equipment RF front-end design and greatly reduces the number of components outside of the core chipset, thus minimizing the footprint and assembly cost of the overall solution.

RF Micro Devices announced today that it is enabling Samsung’s next-generation GALAXY Note II with RFMD’s PowerSmart Power Platforms – the industry’s first and only converged multimode, multiband power amplifiers.

RFMD has revealed that it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone. RFMD expects to supply the majority of the 3G and 4G power amplifiers in Samsung's highest volume smartphones this calendar year.

Designed for 868MHz and 902 to 928MHz AMR solutions, RFMD’s new RF6549 features separate ports for Rx and Tx paths, and two ports on the output for connecting a diversity solution or a test port. The PA section includes a nominal output power of 28dBm. The device comes in a 6mm x 6mm, 32-pin package.

RFMD has today announced two new 6-bit digital step attenuators featuring high linearity over their entire 31.5dB gain control range with excellent step accuracy in 0.5dB steps. RFSA2644/2654 are programmed via a serial mode control interface that is both 3V and 5V compatible.

RFMD have today announced two new small profile, low-cost, drop-in RFCR220x circulators are designed for various wireless applications. They feature robust construction for high reliability, low insertion loss, excellent Inter-Modulation Distortion performance, and are magnetically shielded. They are also RoHS compliant.

RFMD is pleased to announce the release of the new RFPA2089, a 0.25W, 50MHz to 2700MHz InGaP HBT power amplifier specifically designed for wireless infrastructure applications. It offers high-gain linear operation at a comparably low DC power making it ideal for next generation radios requiring high efficiency. Its external matching allows for use across various radio platforms.

RFMD’s new RFSA2514/2524 5-bit digital step attenuators feature high linearity over their entire gain control range with excellent step accuracy in 0.5dB (RFSA2514) or 1dB (RFSA2524) steps. They are programmed via a serial mode control interface that is both 3V and 5V compatible.

The new RF5836 from RFMD provides a complete integrated solution in a single front end module for WiFi 802.11a/n systems. RF5836's ultra-small form factor and integrated matching minimizes the layout area in the customer's application and greatly reduces the number of external components.