IXYS has introduced its IXZ631 Series CMOS high-speed, high-current integrated gate driver and MOSFET modules, from the company's Colorado division. The modules are specifically designed for Class D, E, HF and RF applications at up to 27MHz, as well as other applications requiring high-speed, high-power switching.

IXYS has announced that it has signed a definitive agreement to acquire RadioPulse. Based in Seoul, Korea, the fabless semiconductor company develops, manufactures and sells innovative wireless network technology solutions based on the ZigBee protocol. RadioPulse’s energy-friendly solutions are designed to enable a broad range of power-sensitive applications in the industrial, medical, consumer, smart grid and IoT markets. 

Offering the strengths of both MOSFETs and IGBTs, the BiMOSFET series of Reverse Conducting IGBTs has been released by IXYS. The 3600V devices, which are suitable for high speed, high voltage, and high current power conversion applications feature ‘free’ intrinsic body diodes, and have current ratings from 45 to 125A. 

IXYS Corporation announced the expansion of the product portfolio of the new “Dual Thyristor –Triac” technology platform (DT-Triac)

A development kit has been introduced by IXYS for it's PIM-Mini compact and lightweight laser diode driver. In a pre-assembled and pre-tested package, the PIM-Mini simplifies the design process by providing OEMs with the resources they need to operate their laser diode. The development kit offers the PIM-Mini air-cooled pulsed current source, which is available in a 5, 10, 20, 50 or 200A output current...

Utilising dual power SCR outputs, IXYS Integrated Circuits Division has announced the CPC1964B AC solid state switch. Typical applications include programmable controls, power control panels, remote switching, gas pump electronics, powerline communication, powerline control and power meters.

Expanding the company's Trench MOSFET portfolio, IXYS has announced the MTI200WX75GD MOSFET with an integrated 6-pack configuration in one isolated surface mountable module (ISOPLUS-DIL). The ISOPLUS-DIL package can be surface mounted with standard pick and place equipment, is suitable for re-flow processes and as such can be easily integrated in automated manufacturing lines.

Offering a current ratings range from 20A to 310A, a line of 900VXPT IGBTs has been launched by IXYS. Designed especially for hard-switching applications, these new devices are able to achieve an optimal balance between the turn-off energy loss and on-state voltage. Able to support switching frequencies up to 50 kHz, they allow designers to use smaller and lighter components in their systems.

The introduction of a compact and lightweight pulsed laser diode driver, the PIM-Mini, has been announced by the IXYS Colorado division. The PIM-Mini is an air-cooled pulsed current source designed to drive laser diodes, bars, arrays, or any low-impedance load.

Featuring asymmetrical blocking with a fully rated anti-parallel diode included within the package, the T0258HF65G press-pack IGBT has been launched by IXYS UK. The 6.5kV device has a DC collector current rating of 258A with a repetitive peak current rating of over 500A, further extending the power range of IGBT power switches.

IXYS UK has announced high customer interest in the recent introduction of a range of standard three-level press-pack IGBT phase leg stacks with power ratings up to 16MW. These stack designs are available for applications at three voltage levels 3.3, 6.6 and 10kV and incorporate the company's press-pack IGBT technology.

A Dual IGBT Gate Driver, featuring two high current outputs, has been announced by IXYS. The IX2204 driver's high current outputs are capable of sourcing 2A and sinking 4A. Manufactured on IXYS ICD's advanced BCDMOS Silicon on Insulator (SOI) process, the IX2204 outputs have a wide operation voltage range of -10V to +26V. 

Two high voltage rectifiers with 2.2Kv ratings, in a D2-HV (High Voltage TO-263) package, have been announced by IXYS. The products introduced are the DNA30EM2200PZ and DNA30E2200PZ. The D2-HV Pak is a package solution that offers higher creepage spacing thus enabling higher voltage power semiconductors to be used as SMDs.

With a power rating of up to 16MW, a range of IGBT phase leg stacks has been introduced by IXYS. The standard, three-level, press-pack IGBT phase leg stacks are available at 3 voltages - 3.3kV, 6.6kV and 10kV.

IXYS Corporation announced the integration of more power into the popular SOT-227B/Minibloc package family. With the low profile configuration and robust terminals for higher current conduction, these products are suitable for higher power applications that exceed the capabilities of through the hole “TO” type discrete packages, like the TO-247 and TO-264.

Featuring 400 outputs that are rated for +/-15V, IXYS have released the IXEP1400 electronic paper display (EPD) gate driver.

Consisting of an LED that is optically coupled to a monolithic PV array, the FDA217 is the latest dual photovoltaic MOSFET driver from IXYS. Each array can generate an open circuit voltage of 12.2V and short circuit current of 9.1uA with a forward LED current of 10mA.

Expanding its 650V XPT IGBT product portfolio, IXYS has announced new IGBTs with current ratings of 16-200A. Supporting switching frequencies up to 60 kHz, the devices are targeted at applications including power inverters, uninterruptible power supplies, switch-mode power supplies, power factor correction circuits, battery chargers, welding machines, lamp ballasts, and E-Bikes.

Providing a building block for high-speed power circuit development, the DVRFD630 and DVRFD631 RF MOSFET Gate Driver Development Boards from IXYS are designed to demonstrate the performance of the IXRFD630 and IXRFD631 RF MOSFET gate drivers.  

Designed to improve the power cycling capabilities of power modules, top side solderable metallization has been introduced by IXYS on 200A and 300A, 650V Trench XPTTM IGBT silicon dies. Solderable top side replaces standard bond wire connections by using the standard soldering process, thereby improving power cycling capability and increasing the surge current capabilities of the dies.