A wholly owned subsidiary of IXYS Corporation, IXYS Integrated Circuits Division (ICD) has announced the immediate availability of the CPC1010N, 250V, single-pole, normally open (1-Form-A) Solid State Relay (SSR) with a 170mA load current rating. The CPC1010N is specially designed to provide the best combination of performance, size and price.

A high-speed gate driver chipset that includes a logic interface (the IX6610) and a MOSFET/IGBT gate driver (the IX6611) has been announced by IXYS. The chipset is designed for pulse transformer isolated power conversion applications.

IXYS Corporation has announced a generation of high-current Trench devices: 40V TrenchT4 Power MOSFETs. Available at either 270 or 340A current rating, they are optimised for DC to DC converters, synchronous rectification in switched-mode power conversion applications, high current Solid State Relays and motor control applications.

IXYS Corporation has announced the introduction of the PCX-7500-LIV and PCX-7500-LIV-EX high-power laser diode driver/current sources by its IXYS Colorado division. These instruments provide precision pulsed current with accurate microprocessor-based digital power control.

IXYS Integrated Circuits Division (ICD), a wholly owned subsidiary of IXYS Corporation, announced the immediate availability of the IX9907N High Voltage Dimmable LED Driver IC. Combining a 650V, 2Ω power MOSFET with a quasi-resonant controller, the IX9907N is optimised for off-line dimmable LED applications requiring a high power factor correction.

IXYS Corporation has introduced the ITF48IF1200HR in an ISO247 package with its proprietary DCB, with the lowest thermal resistance, lowest weight and high voltage isolated backside. This package enables higher current and power ratings when compared to other isolated package technologies.

IXYS Corporation has announced that its wholly owned UK subsidiary, IXYS UK Westcode, announces an extension to the voltage range of its pressure contact isolated base dual rectifier diode modules. The module is rated up to 3.6kV and available in three diode configurations.

IXYS has announced that its wholly owned UK subsidiary, IXYS UK Westcode, has added three new voltage classes to its range of 83mm die, pressure contact rectifier diodes. The new introductions are at 1.5kV, 4.0kV and 4.8kV and complement the parts at 2.2kV and 6.0kV already introduced.

IXYS Corporation has announced an expansion of its Ultra Junction Power MOSFET product line: 650V X2-Class Power MOSFETs with fast body diodes. With on-resistance as low as 17mΩ and current ratings ranging from 22 to 150A, these devices are optimised for soft-switching resonant-mode power conversion applications.

IXYS Integrated Circuits Division (ICD) announced the availability of the LIA135 and LIA136 low voltage optically isolated error amplifiers each with an integrated programmable precision shunt reference incorporated into a single 8-pin package.

IXYS Corporation has announced a reference design - High Power Digital Inrush Current Controller. It is based on Zilog’s 8-bit Z8F3281 microcontroller, a member of the Z8 Encore! XP F6482 series of microcontrollers and IXYS high performance power semiconductors.

IXYS has announced that its wholly owned UK subsidiary, IXYS UK Westcode, has introduced a range of smaller footprint pressure contact construction isolated base modules. This product group includes 30 products comprising dual thyristor and diodes, plus diode/thyristor combinations with voltage ratings from 1,400 to 3,600V and current ratings from 160 to 510A.

IXYS has announced that its wholly owned UK subsidiary, IXYS UK Westcode, introduced two 6kV pressure contact rectifier diodes. The two latest diodes have current ratings of 2,830 and 3,090A and are encapsulated in fully hermetic ceramic packages with copper electrodes.

IXYS has announced the expansion of the 'Dual Thyristor –Triac' technology platform (DT-Triac) from 1,600V up to 1,800V. The DT-Triac technology distinguishes itself as a high performance solution in Triac related applications with superior ruggedness and better dV/dt and di/dt ratings when compared to state of the art triacs. The DT-Triac products use IXYS’ advanced planar thyristors that extend the current and voltage ratings of Tri...

Featuring current ratings ranging from 2 to 120A, and on resistance as low as 24mΩ, the 650V X2-Class power MOSFETs have been introduced by IXYS. The devices are particularly suitable for high-efficiency, high-speed power switching applications.

A line of IGBT power modules in industry standard E3 and SIMBUS F housings has been released by IXYS. The IGBTs feature the second generation XPT IGBTs, the X2PT IGBT technology, resulting in improved power switching performance with the high level of ruggedness that characterised the IXYS XPT and other IGBT products.

A 5W solar charger suitable for charging smart phones, tablets, and multi-media players has been introduced by IXYS. Measuring 230mm in length, 160mm in width and 17mm in height, and weighing only 170g, the Solarade is claimed to be the smallest and lightest 5W solar charger on the market.

A lightweight, 5W, mobile photovoltaic panel, featuring an integrated sun-angle adjuster for maximum solar exposure, has been introduced by IXYS. Offering an efficiency of up to 22%, the SLPN005H10L is suitable for powering portable electrical equipment, PCs, tablets, smart phones and charging batteries via an integrated USB port.

IXYS' UK branch has introduced a 3.6kV pressure contact phase control thyristor with increased power density. The improved design offers an increase of up to 52% in average current rating over established designs, whilst retaining overall package footprint. The improvement in performance is achieved with a combination of maximised die size and an improved package design.

IXYS has announced an expansion of its high voltage Power MOSFET product portfolio, the 2000V N-Channel Power MOSFETs. With a current rating of 1A, they are specifically designed for high voltage, high speed power conversion applications. Due to their positive temperature coefficient of RDS(ON), the high voltage power MOSFETs can be operated in parallel.