Search results for "SiC"

Littelfuse hasadded two 1,200V Silicon Carbide (SiC) n channel, enhancement-mode MOSFETs to their expanding first-generation portfolio of power semiconductor devices. These new SiC MOSFETs are the latest products of a strategic partnership that Littelfuse formed with Monolith in 2015 to develop power semiconductors for industrial and automotive markets. The announcement was made in the Littelfuse booth at the Applied Power Electronics Conference ...

Research and innovation hub in nanoelectronics and digital technologies, imec, and fabless technology innovator, Qromis, have announced the development of high performance enhancement mode p-GaN power devices on 200mm engineered Coefficient of Thermal Expansion (CTE)-matched substrates, processed in imec’s silicon pilot line. The substrates are offered by Qromis as commercial 200mm QST substrates as part of their patented product portfolio.

What makes Silicon Carbide gate drivers a disruptive technology in power electronics?

This video highlights TI's verified reference design that provides an overview on how to implement a three-level, three phase SiC based DC/AC grid-tie inverter stage.

A configurable plug-and-play 3D detection sensor has been launched by SICK based on its Visionary-T range of industrial 3D imaging cameras, harnessing the imaging power of SICK’s single-snapshot Time-of–Flight (TOF) technology for a range of detection and collision warning duties.With on-board processing, the Visionary-T DT sensor can be easily configured for a variety of applications to detect the presence or absence of 3D objects. I...

The OD5000 displacement sensor has been launched by SICK to provide high-performance measurement at frequencies of up to 80kHz even with fast-moving and rotating objects, and in high-speed production. The sensor also has an outstanding capability for thickness measurement of surface coatings and transparent materials.

What is the relationship between a silicon carbide FET and a gate driver?

Manufacturer of Silicon Carbide (SiC) power semiconductors,UnitedSiC has announced the UJ3C series of 650V SiC FETs as drop-in replacements for silicon Superjunction MOSFETs. Available in standard TO-220, TO-247 and D2PAK-3L packages, they operate with standard Si-MOSFET gate drive, eliminating the need to re-design drive circuits, while offering low RDS (ON) and low gate charge to reduce system losses.

With the introduction of a new family of 650V silicon carbide (SiC) Schottky diodes,ON Semiconductorhas extended its SiC diode portfolio. The diodes’ silicon carbide technology provideshigher switching capabilities with lower power losses and supposedly effortless paralleling of devices.

Microsemi Corporation, provider of semiconductor solutions differentiated by power, security, reliability and performance, has announced sampling availability of the first product in its next-generation 1200V Silicon Carbide (SiC) MOSFETs, the 40mOhm MSC040SMA120B. The release of the complementary 1200V SiC Schottky barrier diodes (SBDs), has also been announced further expanding Microsemi's growing SiC discretes and modules portfolios.