Search results for "transistor"
Integrated circuit technology continues to advance
The success and proliferation of integrated circuits has largely hinged on the ability of IC manufacturers to continue offering more performance and functionality for the money. Driving down the cost of ICs (on a per-function or per-performance basis) is inescapably tied to a growing arsenal of technologies and wafer-fab manufacturing disciplines as mainstream CMOS processes reach their theoretical, practical, and economic limits.
Organic thin film achieves power conversion efficiency of 13%
Scientists from the Imperial College London, Monash University, CSIRO, and King Abdullah University of Science and Technology have reported an organic thin film for solar cells with a non-fullerene small molecule acceptor that achieved a power conversion efficiency of just over 13%.By replacing phenylalkyl side chains in indacenodithieno[3,2-b]thiophene-based non-fullerene acceptor (ITIC) with simple linear chains to form C8-ITIC, they improved t...
Efficiency is key to cost-effective data storage
Protecting the systems that store data and ensuring constant, high power supply at low acquisition and operating costs is a significant challenge for design engineers, says Armin Derpmanns, general manager, solution marketing at Toshiba Electronics Europe
IMS evaluation platform handles 3kW or higher applications
Availability and full design support capabilities for a new insulated metal substrate (IMS) evaluation platform from GaN Systems have been announced by Richardson RFPD.The platform consists of a motherboard (GSP65MB-EVB) and two IMS evaluation modules.
Celebrating 70 years of the transistor
In 1947 three engineers working for Bell Labs in New Jersey, US, achieved something that had a transformative impact on the technology industry, and the entire world. John Bardeen, Walter Houser Brattain, and William Bradford Shockley invented the first transistor and so ushered in the silicon age. By David Harold, VP Communications, Imagination Technologies
GaN-based development board reduces power supply size
A five-phase development board by Efficient Power Conversion (EPC) demonstrates the reduction in size and the enhanced efficiency for power conversion that can be achieved using high frequency switching eGaN power transistors, says the company.
Test lab for power components opens in Germany
With the introduction of its newly established European 'Power Lab', ROHM Semiconductor has demonstrated the deployment of its global strategy on the power semiconductor market in Europe. The company's mission statement has been 'Quality is our top priority' for 60 years, and the newpower electronics lab confirms this high standard.
Nexperia opens expansion at Guangdong assembly and test facility
Nexperiaformerly opened a significant expansion to its ATGD discrete semiconductor assembly and test plant in Guangdong, China. The total production and warehouse site now covers an area of around 72,000m², adding an extra 16,000m² of production space. This will enable the factory in Guangdong to produce 90 billion parts annually, representing an increase of around 50% depending on product mix, and supporting Nexperia’s ambitious ...
Radiation-hardened 100 and 200V GaN FET power drivers
Supplier of advanced semiconductor solutions, Renesas Electronics, has announced what it claims to be the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications.
RF LDMOS power transistor replaces magnetrons
Availability and full design support capabilities for an RF power LDMOS transistor from NXP Semiconductors have been announced by distributor Richardson RFPD.The MRF13750H/ MRF13750HS, available in bolt-down and solder-down styles, is a 750W continuous wave transistor designed for industrial, scientific and medical (ISM) applications in the 700 to 1300MHz frequency range.