Search results for "Wolfspeed"
Wolfspeed releases 28V 30W GaN HEMT Die
Wolfspeed has released a 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11 – 13th, 2016 in Clearwater Beach, Fla. Designed for up to 8GHz operation, the 28V GaN HEMT die exhibits 12dB typical small signal gain at 8GHz, 17dB typical small signal gain at 4GHz, and 30W typical PSAT.
SiC and GaN technologies lead the way at PCIM 2016
This year’s PCIM exhibition introduced a whole host of new power products, technologies and applications. Sally Ward-Foxton reports from Nuremberg.This year’s PCIM (power conversion, intelligent motion) exhibition in Nuremberg brought together 436 exhibitors and more than 10,000 visitors from around the world to share the latest in power products, technologies and applications.
Evaluate the performance of SiC-based power circuits
Wolfspeed, A Cree Company, has introduced a free online circuit simulation tool that allows power electronics design engineers to simulate and evaluate the performance of SiC-based power circuits, and to aid in the selection of the optimum SiC devices for each application.
Wolfspeed GaN RF devices demonstrate space reliability
Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems. Wolfspeed’s proven GaN-on-SiC fabrication processes have demonstrated industry-leading reliability and performance, delivering more than 100bn total hours of field operation with a best-in-class FIT rate of less than-5-per bn device hours for discrete ...
All-SiC power module achieves efficiencies over 98%
Wolfspeed, a Cree company, has introduced a high-performance 62mm power module, using the company's second generation SiC to produce all SiC power modules, claimed to enable unprecedented efficiency and power density for converters, inverters, motor drives, industrial electronics and EV systems.
Wolfspeed to exhibit SiC power portfolio at APEC 2016
Wolfspeed, A Cree Company, will be showcasing its industry-leading solutions at this year’s Applied Power Electronics Conference and Exposition (APEC 2016). The annual conference, which will take place March 20 – 24th in Long Beach, Calif., is globally recognised as the leading North American technical gathering dedicated to the applied power electronics industry. In addition to their exhibition, Wolfspeed engineers will be presenting...
900v SiC MOSFETs cut cooling requirements
Availability and full design support capabilities for the expanded portfolio of 900V MOSFETs from Wolfspeed have been announced by Richardson RFPD. The C3M0120090J, C3M0120090D, C3M0280090J and C3M0280090D join the previously-released C3M0065090J and C3M0065090D and feature Wolfspeed’s new C3M SiC MOSFET technology.
SiC MOSFETs enable higher efficiency & power density
Wolfspeed, a Cree company, has announced that Gruppo PBM is using its MOSFETs in the HF9 battery charger family to enable higher efficiency and power density at a lower overall system cost.
MOSFET driver offers increased power per channel
A new six-channel silicon carbide MOSFET driver from Wolfspeed is in stock at Richardson RFPD with full design support and capabilities. The CGD15FB45P1 features six output channels, isolated power supply, a direct-mount low inductance design, short circuit protection, and over-temperature and under-voltage protection.
Surface-mount SiC MOSFET provides 1.7kV blocking voltage
Wolfspeed, A Cree company, continues its innovation in SiC power device technology and packaging with the introduction of the industry’s first 1,700V SiC MOSFET offered in an optimised surface mount package designed for commercial use in auxiliary power supplies in high voltage power inverter systems.