Search results for "Wolfspeed"

A new evaluation board from Wolfspeed, a Cree Company is available at Richardson RFPD. The CRD-060DD17P-2 is a demonstration board for a single-end flyback converter design built with Wolfspeed’s commercially-available 1700V SiC MOSFET. The 48W experimental reference design demonstrates how the 1700V SiC MOSFET can reduce total cost and simplify the design of auxiliary power supply.

Infineon Technologies and Cree have announced that Infineon has entered into a definitive agreement to acquire the Wolfspeed Power and RF division ('Wolfspeed') of Cree. The deal also includes the related SiC wafer substrate business for power and RF power. The purchase price for this planned all-cash transaction is $850m (approximately €740m).

The 2016 ECN IMPACT Award was presented to Wolfspeed in the passive components and discrete semiconductors category for its CAS325M12HM2 high performance, 1200V, 325A, 62mm SiC half-bridge module.

A 1000V MOSFET has been introduced byWolfspeedthat enables a reduction in overall system cost, while improving system efficiency and decreasing system size.

This year’s European Conference on Silicon Carbide and Related Materials (ECSCRM) will see Wolfspeed, a Cree company, sponsoring, exhibiting, presenting and hosting and industry social event.A biannual scientific forum that invites international specialists to explore the latest achievements in the field of wide bandgap semiconductors, and especially silicon carbide, ECSCRM 2016 will take place 25th-29th September, in Halkidiki, Greece.

Progressive system-level design must be adopted, urges Guy Moxey, Wolfspeed, in order to capitalise on the advantages that silicon carbide (SiC) devices provide for power design

Infineon has entered into a definitive agreement to acquire the Wolfspeed Power and RF division (“Wolfspeed”) of Cree. The deal also includes the related SiC wafer substrate business for power and RF power. The purchase price for this planned all-cash transaction is $850m (approximately €740m). This acquisition will enable Infineon to provide the broadest offering in compound semiconductors and will further strengthen Infineon as...

Availability and full design support capabilities for a new silicon carbide power MOSFET from Wolfspeed, has been announced by Richardson RFPD. According to Wolfspeed, the C20045170 is claimed to be the industry’s first 1700 V, 45 mΩ SiC MOSFET. It offers high-speed switching with low capacitances, avalanche ruggedness, fast intrinsic diode with low reverse recovery (Qrr), and it is easy to parallel and simple to drive.

What strategy will other power electronics companies adopt in response to Infineon Technologies? Do they have to make strategic technical choices? Will we see new collaborations, mergers or acquisitions in the near future? According to Yole’s analysts, it’s likely we will.Last week, Infineon Technologies’ acquisition of Wolfspeed for $850m in cash made lots of noise in the compound semiconductor world.

The latest evaluation kit from Wolfspeed is now available from Richardson RFPD. The CRD-5FF0912P includes two of Wolfspeed’s 900V third-generation SiC MOSFETs (the 3M0120090J) in surface mount 7L-D2PAK packages. The board allows easy evaluation of the MOSFET switching waveforms, gate drive circuit performance and protection implementation on a PCB.