Search results for "SiC"

Filled with new products and demonstrations focused on solutions for the rapidly evolving markets of automotive, high performance power conversion (HPPC) and the Internet of Things (IoT), ON Semiconductor’s booth at electronica will showcase a range of energy efficient innovations in semiconductor technology.

X-FAB Silicon Foundries has announced plans to double their 6" Silicon Carbide (SiC) process capacity at its fab in Lubbock, Texas in response to increased customer demand for high efficiency power semiconductor devices.

STMicroelectronicsand Leti have announced their cooperation to industrialise GaN (Gallium Nitride)-on-Silicon technologies for power switching devices. This power GaN-on-Si technology will enable ST to address high efficiency, high power applications, including automotive on-board chargers for hybrid and electric vehicles, wireless charging, and servers.

With the launch of its Telematic Data Collector (TDC) gateway system, SICK has unlocked the power of data collected by multiple sensors in automated production environments and delivered it to the fingertips of engineers for real-time monitoring, analysis and alarms.The SICK TDC is a simple-to-use, remote-access plant management tool for both operators and system managers, aiding condition monitoring and prognostics as part of Industry 4.0-enable...

This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC/AC grid-tie inverter stage. Higher switching frequency of 50KHzreduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99%. This design is configurable to work as a tw...

Acomprehensive through-hole series of 650V silicon carbide (SiC) power schottky rectifiers has been announced bySMC Diode Solutions.The high voltage series boast industry silicon carbide technology, which provides very low total conduction losses and very stables switching characteristics over temperature extremes.

The SiC46X from Vishay is a family of wide input voltage high efficiency synchronous buck regulators with integrated high side and low side power MOSFETs now available from Rutronik UK. Its power stage is capable of supplying high continuous current at 2MHz switching frequency optimised to achieve up to 98% efficiency.

Technical innovations in power module packaging are mainly driven by the challenging system requirements of the booming EV/HEV industry and the entrance of WBG materials. The companies Yole Développement (Yole) and System Plus consulting, both part of Yole Group of Companies, have proposed, two dedicated analysis'.

At the Semicon Taiwan show in Taipeh (5th to 7th September), and at the European Microwave Week in Madrid/Spain (23rd to 28th September), EpiGaN will exhibit and highlight its latest GaN epiwafer developments tailored to 5G applications.

The UCC21520-Q1 from Texas Instruments, is an isolated dual-channel gate drivers with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz with best-in-class propagation delay and pulse-width distortion.