Search results for "SiC"

At PCIM in Nuremberg, Germany (7th-9th May, 2019), ROHM Semiconductor will showcase power semiconductor solutions focused on E-mobility and power supply applications. Energy savings and reduced system costs in all kinds of systems are heavily influenced by choosing the right power device.

Will all students one day have the opportunity to explore the world from within their classroom walls? Worldwide shipments for augmented reality and virtual reality headsets will grow to 68.9 million units in 2022, with a five-year compound annual growth rate of 52.5%, according to the latest forecast from the International Data Corporation Worldwide Quarterly Augmented and Virtual Reality Headset Tracker.

Constructing power-intensive data centres where electricity can be obtained on a climate-friendly basis, for example in wind turbines, has been the idea for ‘WindCORES’ for a couple of years now. A new project called ‘WindCORES++’, which was developed in cooperation between WestfalenWIND IT, Rittal and SICP, won in Category 1 of the German Data Centre Award in the ‘Ideas and research in relation to data centres&rsquo...

Pre-Switch, a Silicon Valley start-up that emerged from stealth mode last year, has expanded its revolutionary soft-switching IGBT and silicon carbide gate driver architecture to cover 3-phase power systems. The platform, including the Pre-Drive3 controller board, powered by the Pre-Flex FPGA, and RPG gate driver board, enables a doubling of power output for a typical inverter, or an increase in switching speed by a factor of up to 20 times.

UnitedSiC has announced that it has released a range of SiC JFET die suitable for co-packaging with a controller IC with built in low voltage MOSFET to fabricate an extremely fast, cascode-based, 20-100W Flyback product. Ranging from 650-1,700V, these normally-on SiC JFETs enable simplified start-up implementation with zero standby dissipation.

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has announced a strategic investment and long-term supply agreement from Analog Devices (ADI). Terms of the investment and supply agreement were not announced.

ON Semiconductor has introduced two newSilicon Carbide (SiC) MOSFET devices. The industrial grade NTHL080N120SC1 and AEC-Q101 automotive grade NVHL080N120SC1 bring the enabling, wide ranging performance benefits of wide band gap technology to important high growth end application areas such as Automotive DCDC and onboard charger applications forelectric vehiclesas well assolar, anduninterruptible and server power supplies.

Understanding the structure of SiC MOSFETs helps engineers develop appropriate systems, say Levi Gant, Littelfuse and Sujit Banerjee, Monolith Semiconductor

It has been announced that Cree has signed a multi-year agreement to produce and supply its Wolfspeed silicon carbide (SiC) wafers to STMicroelectronics. The agreement governs the supply of a quarter billion dollars of Cree’s advanced 150mm silicon carbide bare and epitaxial wafers to STMicroelectronics during this period of extraordinary growth and demand for silicon carbide power devices.

It has been announced that Wolfspeed, A Cree Company, has introduced the 5th generation (C5D) 1,700V SiC Schottky diode, which is optimised for renewable energy, industrial power and electric vehicle charging applications including solar power and wind turbine inverters, off-board chargers and uninterruptible power supply (UPS).