Search results for "transistor"
Desktop resistance weld checker for monitoring key welding variables
A manufacturer of resistance welding, laser welding, marking, cutting, and micromachining equipment and systems, Amada Miyachi America, has announced the new MM-400A desktop resistance weld checker. With the MM-400A, operators can easily monitor and manage key welding variables that result in changes in weld heat, including current, voltage, time, force and displacement.
UnitedSiC introduces new UF3C “FAST” Silicon Carbide FET series
UnitedSiC launch its UF3C FAST series of 650 V and 1200 V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series.
Super-junction MOSFETs target energy-saving power topologies
Targeting energy-saving power topologies, STMicroelectronics’ MDmesh M6 series 600V super-junction transistors are engineered for high efficiency in medium-power resonant and hard-switching converter topologies. The threshold voltage optimised for soft switching makes the the new transistors suited for LLC resonant converters and boost-PFC converters in energy-conscious applications.
H-bridge driver IC supporting low-voltage, large current drive
An addition to Toshiba Electronics Europe’s (Toshiba) line-up of dual H-bridge driver ICs for DC brushed motors and stepping motors has been launched. The new TC78H653FTG delivers the low voltage (1.8V) and high current (4.0A) essential for motor-based equipment powered by dry-cell batteries such as mobile devices, electronic products for the home and USB drives.
Adaptive acceleration to bring AI from the cloud to the edge
Emerging applications for AI will depend on System-on-Chip devices with configurable acceleration to satisfy increasingly tough performance and efficiency demands. Author: Dale Hitt, Director Strategic Marketing Development at Xilinx
Stacked nanowire gate-all-around transistors for N3 and beyond
At this week’s 2018 IEEE International Electron Devices Meeting (IEDM), imec, the research and innovation hub in nano-electronics and digital technology, reported significant progress in process enabling the introduction of gate-all-around (GAA) transistors with vertically stacked nanowires and nanosheets for the N3 technology node.
GaN modules target high-performance applications
A full line of gallium arsenide (GaN) modules from Texas Instruments (TI) is in stock at Mouser Electronics. The GaN controllers, regulators, and drivers deliver reduced power with end-to-end power conversion and 5MHz switching frequencies for high-performance applications such as electric motor design, augmented reality, LiDAR, and high-density industrial and commercial power supplies.
Encoder output choices for best performance and signal integrity
Motion control applications typically require one or more position encoders. Several types are available and the engineer must first decide whether an incremental, absolute, or commutation encoder is most appropriate. After this decision has been made, other selection criteria include resolution and mechanical aspects, such as the mounting pattern and motor shaft size. By Jason Kelly, Motion Control Design and Applications Engineer, CUI Devices
Isolated IGBT gate-drive power supply reference design
This reference design from Texas Instruments provides isolated positive and negative voltage rails for Insulated Gate Bipolar Transistor (IGBT) gate drivers from 24V DC input supply. It uses a flyback power supply topology to generate four pairs of 15-V and –5-V outputs suitable for powering six IGBT gate drivers of one watt each.
High-performance silicon carbide FETs with increased switching speeds
Manufacturer of silicon carbide (SiC) power semiconductors, UnitedSiC, has announced the launch of its UF3C FAST series of 650 and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series.