Search results for "transistor"
Graphene linear array sensor to launch at Laser World of Photonics
Graphene Flagshippartner, Emberion, is launching a new VIS-SWIR graphene photodetector at Laser World of Photonics on 24th to 27th June in Munich, Germany. Showcased in Hall A2 at stand 113/3, the linear array can enable on-site analysis of food and agriculture products using infrared detection - at a lower cost than existing indium gallium arsenide (InGaAs) infrared sensors.
Power device analyser boasts double-pulse test capability
A dynamic power device analyser with double-pulse tester (PD1500A) from Keysight Technologies delivers reliable, repeatable measurements of wide-bandgap (WBG) semiconductors, while ensuring the safety of the measurement hardware and the professionals performing the tests.
High temperature gate drivers at PCIM 2019
Specialist in high temperature semiconductors, CISSOID, will present new High Temperature Gate Drivers, SiC MOSFET’s and IGBT Power Modules at PCIM 2019, the exhibition and conference for power electronics, intelligent motion, renewable energy, and energy management.
Voltage level translator provides flexibility for networks and servers
Diodes Incorporated has announced a new addition to its family of low voltage level translators, offering simple and autonomous bidirectional operation. ThePI4GTL2002is a 2-bit level shifter designed to translate signals conditioned for one voltage level to signals at a higher or lower voltage, such as Gunner Transceiver Logic (GTL) or GTL+ to LVTTL/TTL.
Circuit simulator delivers 10X performance gains
The Spectre X Simulator from Cadence Design Systems is a massively parallel circuit simulator designed to provide up to 10X performance gains, while maintaining accuracy in analogue, mixed-signal and RF applications. The simulator can solve 5X larger designs when compared to previous simulation solutions, enabling customers to effectively simulate circuits containing millions of transistors and billions of parasitics in a post-layout verification...
RF power technology innovations at IMS 2019
At the IEEE International Microwave Symposium (IMS) held in Boston, Massachusetts, USA, Ampleon announced it will participate in order to introduce its wide variety of new LDMOS and GaN solutions targeting telecom, aerospace and defence, NCC, ISM, cooking and defrosting applications.
Highest current rated GaN power semiconductors at PCIM 2019
GaN Systemswill demonstrate the650V, 150A GaN power transistor- according to the company it is the industry’s highest current 650V GaN power transistor-atPCIM Europein Nuremberg, Germany on 7th-9th May, 2019 at Booth 9-507. TheGS-065-150device has 100 times lower switching losses than comparable IGBTs - that’s two orders of magnitude less, a 99% reduction in switching losses.
SiC FETs get closer to the ideal switch
The SiC FET in a ‘cascode configuration comes closer to the ideal power switch, believes Dr Anup Bhalla, VP engineering at UnitedSiC
Design platform enables tapeout of gate-all-around transistor SoC
It has been announced by Synopsys, that Synopsys' Fusion Design Platform, including the IC Compiler II place-and-route system, has enabled the successful tapeout of Samsung Foundry's industry-first gate-all-around (GAA) system-on-chip (SoC) test chip comprising several high-performance, multi-core subsystems.
GaN brings efficiency to server power supplies
High efficiency, high density power supplies in the telecomms, server and consumer adapter market are targeted by Alpha and Omega Semiconductor, with the introduction of the first transistor in its 650V aGaN family.