Search results for "transistor"
A milestone in sensor technology
A groundbreaking integration technology for the simultaneous measurement of various water parameters using ion-sensitive field-effect transistors (ISFETs) is presented by the Fraunhofer Institute for Photonic Microsystems IPMS.
Wise-integration and Leadtrend launch GaN SiP
French-based company Wise-integration, together with Leadtrend Technology Corporation, a specialist in analogue and analogue-digital mixed-mode IC designs, has announced the release of a GaN system-in-package (SiP) for consumer electronics applications.
Detection Technology launches IGZO flat panel detectors
Detection Technology has launched indium gallium zinc oxide thin-film transistor (IGZO-TFT) flat panel detectors (FPD) to enhance dental imaging.
Professor resolves two decades of oxide semiconductor challenges
In a significant stride for semiconductor technology, a team led by Professor Yong-Young Noh from the Department of Chemical Engineering at Pohang University of Science and Technology (POSTECH) has developed a new tellurium-selenium composite oxide semiconductor material.
sureCore announces successful tape-out of cryogenic IP demonstrator
SureCore, the ultra-low power embedded memory specialist, has announced the successful tape out of the next key part of the Innovate UK (IUK)-funded project‘Development of CryoCMOS to Enable the Next Generation of Scalable Quantum Computers’.
Texas Instruments brings you the latest in High Voltage
Here, you’ll find a selection of the latest news, products, and articles from Texas Instruments focused on High Voltage.
Quantum electronics breakthrough sparks new debates
An international research team, led by the University of Göttingen, has experimentally shown that electrons in double-layer graphene, found naturally, behave as if they are massless, akin to the manner in which light travels, opening possibilities for quantum electronics.
LMG1210 by Texas Instruments
The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency.
Custom silicon chips for printed electronics material characterisation
How efficient are new materials? Does changing the properties lead to better conductivity? The Fraunhofer Institute for Photonic Microsystems IPMS develops and manufactures silicon substrates for this purpose.
NTT PHI Lab achieves quantum control of excitons in 2D semiconductors
NTT Research, a division of NTT, has announced that scientists from its Physics and Informatics (PHI) Lab have achieved quantum control of exciton wavefunctions in two-dimensional (2D) semiconductors.