Search results for "SiC"
Nexperia invests $200m in Hamburg
Semiconductor manufacturer Nexperia has announced a USD 200 million (approximately 184 million Euros) investment to develop the next generation of wide bandgap (WBG) semiconductors, including silicon carbide (SiC) and gallium nitride (GaN), and to enhance production infrastructure at its Hamburg site.
ASMPT showcased power module solutions at PCIM
At the PCIM Europe event in Nuremberg, ASMPT showcased a comprehensive power module manufacturing solution.
Heraeus joins EU project FastLane
Heraeus Electronics is pleased to announce its involvement in the FastLane project, a forward-thinking EU-funded initiative dedicated to transforming the European value chain for Silicon Carbide (SiC)-based power electronics.
Renesas completes acquisition of Transphorm
Renesas Electronics, a premier supplier of advanced semiconductor solutions, announces that it has completed the acquisition of Transphorm, a global specialist in gallium nitride (GaN) power semiconductors, as of 20thJune 2024.
PCIM Europe 2024: the highlights
With PCIM Europe 2024 now behind us, what better time to look back at the trends, innovations, and discussions happening within the power electronics industry.
Navitas explores what’s next for GaN at PCIM 2024
At PCIM 2024 on the Navitas booth, the company was excited to show off its new portfolio of next-generation SiC and GaN solutions for fast charging, motor drives, power conversion and storage, and beyond. To learn more, Electronic Specifier’s Harry Fowle spoke with Llew Vaughan-Edmunds, Senior Director of Product Management (SiC, GaN) at Navitas, who shared his insights in the latest GaN innovations.
Microchip PCIM 2024: on-board charger design made easy
At PCIM 2024, Microchip announced its On-Board Charger (OBC) solution that uses a selection of its automotive-qualified digital, analog, connectivity and power devices, including the dsPIC33C Digital Signal Controller (DSC), the MCP14C1 isolated SiC gate driver and mSiC MOSFETs in an industry-standard D2PAK-7L XL package.
Qorvo revolutionises circuit breakers
Qorvo announced the industry's first 4 milliohm silicon carbide (SiC) junction field-effect transistor (JFET) in a TOLL package.
ROHM's new EcoSiC brand combines performance and sustainability
ROHM has announced the launch of its new EcoSiC brand. EcoSiC is a trademark for ROHM products using the advanced material silicon carbide (SiC).
TMS320F28388D by Texas Instruments
The TMS320F2838x (F2838x) is a member of the C2000 real-time microcontroller family of scalable, ultra-low latency devices designed for efficiency in power electronics, including but not limited to: high power density, high switching frequencies, and supporting the use of GaN and SiC technologies.