Search results for "transistor"
Go-ahead for GaN
It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow, Efficient Power Conversion
GaN textbook with power conversion applications focus
Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of ‘GaN Transistors for Efficient Power Conversion’, a textbook written by power conversion industry experts and published by John Wiley and Sons. It is designed to provide power system design engineering students, as well as practising engineers, basic technical and application-focused information on how to design more efficient power conversio...
Competition winners honoured at CPSS awards ceremony
GaN Systems, alongside the China Power Supply Society (CPSS), China Power Society Science Popularization Committee, and Tsinghua University have announced the winners of the fifth annual 'GaN Systems Cup' design competition at an awards ceremony at the China Power Supply Society Conference (CPSSC) on 3rd November, 2019.
Evaluation board demonstrates next performance leap in GaN
GaN Systems and ON Semiconductor have announced the availability of a high speed, half bridge GaN daughter board using GaN Systems’ 650V, 30A GaN E-HEMTs and ON Semiconductor’s NCP51820 high speed gate driver evaluation board.This evaluation board is developed for existing and new PCB designs and allows designers to easily evaluate GaN in existing half bridge or full bridge power supplies.
EuMW 2019: LDMoS and GaN solutions promenade in Paris
During European Microwave Week 2019 in Paris, Ampleon will participate in the exhibition, present several technical papers and sponsor the European Microwave Student Design Competition Thrust 2 “Wideband Power Amplifier Biasing Network Design” element.
GaN advancements to be showcased at Power Supply Society Conference
GaN Systems hasannounced its participation at the 23rd annualChina Power Supply Society Conference(CPSSC), one of the largest power electronics evenst in Asia, on 1st-4thNovember, 2019 in Shenzhen, China.Spearheading discussions on GaN innovation and technological development, the company will give presentations on the application of GaN inindustrialandautomotiveindustries and display its latestsolutions,design tools, and innovative products.
Reinforced isolation dual-channel gate driver with spacing option
The UCC2154x from Texas Instruments is an isolated dual channel gate driver family designed with up to 4-A/6-A peak source/sink current to drive power MOSFET, IGBT, and GaN transistors. UCC21540 in DWK package also offers 3.3mm minimum channel-to-channel spacing which facilitates higher bus voltage.
eGan FET wins AEC Q101 qualification
EPC has been achieved successful AEC Q101 qualification of its 15V EPC2216 eGaN FET. It is designed for lidar applications where increased accuracy is vital such as in self-driving cars and other time-of-flight (TOF) applications including facial recognition, warehouse automation, drones and mapping.
GaN and SiC power semiconductor market to reach $3bn by 2025
The GaN and SiC Power Semiconductor Market is set to grow from its current market value of more than $400m to over $3bn by 2025; as reported in the latest study byGlobal Market Insights.The expanding prominence of EVs can be aptly credited for the proliferation of GaN and SiC power semiconductor market trends. Even though automakers are introducing EVs, their short driving range has dented their growth prospects, commanding the requirement of enh...
The GaN industry: tech, innovation and upcoming conferences
As GaN takes centre stage in conversations around power electronics and in key energy-intensive industries,GaN Systemswill deliver presentations at several conferences worldwide. Various key executives and experts will be speaking about the impact and opportunities GaN brings in improving and creating new energy efficient systems and how the technology is innovating industries, including wireless charging in consumer electronics and industrial ap...