Search results for "Ampleon"
Ampleon showcases RF energy innovations at EDI CON
Ampleon announced its participation at the forthcoming Electronic Design Innovation Conference - EDI CON – held in Beijing between 19th to 21st April, 2016. At their booth, number 607, Ampleon will showcase demonstrations of a plasma light module developed by Luma in collaboration with Ampleon and, a new recently announced solid state oven developed by Midea in collaboration with Ampleon, in addition to a number of GaN and LDMOS RF power tr...
Collaboration results in world’s first solid state oven
Ampleon and Midea has announced the results of a yearlong joint collaboration into the use of solid state technology for compact oven design. This initiative has resulted in Midea launching what is believed to be the world’s first commercially available solid state RF energy oven.
RF transistor delivers more than 50% power efficiency
Designed for DVB-T UHF asymmetrical wideband Doherty amplifier applications, the BLF888E RF power transistor has been unveiled by Ampleon. The device is fabricated in a SOT539 package using a 6th gen high voltage LDMOS process, enabling greater than 50% power efficiency. According to the manufacturer, this is typically up to 10% more efficient compared to previous devices.
Research explores full spectrum lighting for horticulture
Ampleon has entered into a collaborative research project with the HAS University of Applied Sciences in Den Bosch, The Netherlands into the use of full spectrum lighting for horticultural applications. The project will validate and summarise current research and investigations that are available.
Ampleon takes responsibility for RF power
Ampleon has announced the formation of its global business operations following the successful acquisition of the RF Power business line by Jianguang Asset Management from NXP Semiconductors. With immediate effect Ampleon takes responsibility for the entire RF Power business activity, including sales and support of the complete line-up of LDMOS and GaN RF power products.
GaN RF power transistors come in 10 to 200W ratings
Ampleon has announced the extension of its portfolio of GaN RF power transistors based on a 0.5um HEMT process technology. Comprising 10, 30, 50 and 100W devices, over ten transistors are currently available suitable for multiple applications such as drivers up to C band, through to 100 and 200W push-pull packages for use in final stages up to S band.