Search results for "Ampleon"

Ampleon announced the BLF189XR, the latest member of its renowned family of extremely rugged “XR” LDMOS power transistors designed specifically for use in high power amplifiers operating in the 10 – 500 MHz. Suiting use in a wide variety of broadcast and industrial applications, and capable of operating with a VSWR up to 65:1, the device is rated to deliver 1,700 W CW or 1,900 W pulsed.

Ampleon has announced that it will demonstrate a wideband system solution at IMS 2016 that uses Xilinx’s Digital Pre-Distortion (DPD) IP with Xilinx All Programmable SoC and MPSoC technology.

Ampleon has launched its '24/7 RF' e-book manual. The first edition of the guide is an essential reference book for any engineer working on RF power amplifier designs. Composed of RF Applications, Technologies and RF Product Portfolio sections, the 24/7 RF e-book highlights design concepts and example schematic diagrams for each specific application sector.

Ampleon has announced a wide portfolio of RF Power solutions for medium power and massive-MIMO applications. These applications include LTE pico- and micro-cells as well as multiple-antenna array (LTE-Advanced Pro and 5G) systems. Proposed for all cellular bands from 700MHz to 3.8GHz these solutions are available in a range of forms from dual-stage MMICs to fully integrated multi-stage Doherty PAs matched to 50Ω.

Claimed to be the world’s smallest 250W design, Ampleon has announced the availability of a 250W, 2.4-2.5GHz amplifier reference design. The MicroBlaze 250 measures just 80x40x5mm and is suited for use in RF cooking and industrial heating designs where power controllability and a modular design approach are key criteria.

Designed for a variety of civil and military radar applications, two 400W S band power amplifier pallets have been announced by Ampleon. TheBLS9G3135P-400 and BLS9G2934P-400 small form factor modules, measuring just 55x35mm, reduce the overall size of the PA sub assembly in addition to reducing the design’s BOM cost.

Ampleon has introduced its 2nd gen 50V 0.5µm GaN on SiC RF power transistors, dedicated for mobile broadband applications. Providing a 5% improvement in power efficiency compared to LDMOS-based devices and enabling high-power multiband applications, this GaN family also offers a size reduction in the order of 30 to 50%, when compared to similar LDMOS transistors.

Ampleon has announced the availability of a new package platform that will be rolled out across the entire LDMOS and GaN product portfolio. Over a dozen variants of the SOT502 and SOT539 platforms are in development. The ACP3, a copper flanged air cavity package will initially be available for GEN9 and GEN10 high power RF transistors.

A 1,400W, CW capable, high power extremely rugged transistor has been introduced by Ampleon. Constructed in a thermally optimised air cavity ACP3 copper flanged plastic package, the BLCU188XRS is able to withstand load mismatches up to a VSWR > 65:1.This Gen6 HV 50V LDMOS device has a 30% better thermal resistance compared to a traditional air cavity ceramic packaged transistor and, combined with its high efficiency, requires less stringent co...

Ampleon has announced details of its participation at the forthcoming IEEE MTT International Microwave Symposium (IMS) held in San Francisco 22 – 27th May, 2016. On display at booth 2149 will be the latest innovations in power amplifier solutions for mobile broadband applications, Doherty amplifiers for use in broadcast and new product concepts such as pallets for S-band radar applications. Also showcased will be products housed in thermall...