Search results for "transistor"

GaNSystems hasannounced that theSyng Cell Alphawireless speaker uses GaN Systems transistors. Innovative audio company Syng is founded by former Apple designer Christopher Stringer, who helped develop the HomePod, iPhone, iPad, and MacBook, and entrepreneur Damon Way, co-founder of DC Shoes and Incase.

SweGaN hasannounced it is partnering withFerdinand-Braun-Institut (FBH)andUniversity of Bristolin a European Space Agency project 'Kassiopeia' that includes a focus on SweGaN’s QuanFINE GaN-on-SiC epitaxial materials to help boost the device efficiency for Ka band applications.

SweGaN AB has announced that it is partnering with Ferdinand-Braun-Institut (FBH) and the University of Bristol in a European Space Agency project ‘Kassiopeia’ that includes a focus on SweGaN’s QuanFINE GaN-on-SiC epitaxial materials to help boost the device efficiency for Ka band applications.

Transphorm and Silanna Semiconductor has announced GaN power adapter reference design. The solution is an open frame, 65W USB-C Power Delivery (PD) charger that combines Transphorm’s SuperGaN Gen IV platform with Silanna Semiconductor’s proprietary Active Clamp Flyback (ACF) PWM controller. Together, the technologies yield an unprecedented peak efficiency of 94.5% with an uncased power density of 30W/in3.

STMicroelectronics has released the first reference design for its MasterGaN power packages, demonstrating how the new highly integrated devices increase power density, boost energy efficiency, simplify design, and accelerate time to market.

Mouser Electronics and PANJIT, a discrete semiconductor manufacturer have agreed a global distribution deal. Through the agreement, Mouser now stocks a wide selection of PANJIT diodes, rectifiers, and transistors.

PCIM 2021 Digtial Days: A GaN-based reference design from GaN Systems exceeds the 80 PLUS Titanium standard for power supplies for high power density and high efficiency resonant converter design

At this year’s PCIM Digital Days, Nexperia highlighted its work in the automotive sector and GaN technology.

Imec and AIXTRON have demonstrated epitaxial growth of gallium-nitride (GaN) buffer layers qualified for 1,200V applications on 200mm QST substrates, with a hard breakdown exceeding 1,800V. The manufacturability of 1,200V-qualified buffer layers opens doors to highest voltage GaN-based power applications such as electric cars, previously only with feasible silicon-carbide (SiC)-based technology.

GaN Systemshas announced its participation atPCIM Europe Digital Days, the exhibition and conference for power electronics, taking place May 3rdto 7th, 2021. CEO Jim Witham will join other GaN experts in a panel session moderated by Bodo's Power Systems, ‘WBG GaN: Serving Low to Line Voltage’, on May 5th, 2021 to illustrate how GaN power semiconductors have become the fundamental building block in power electronics.